Datasheets
MSC080SMA120B by:

Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD

Part Details for MSC080SMA120B by Microchip Technology Inc

Overview of MSC080SMA120B by Microchip Technology Inc

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Price & Stock for MSC080SMA120B

Part # Distributor Description Stock Price Buy
DISTI # 78AH6584
Newark Mosfet Sic 1200 V 80 Mohm To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip MSC080SMA120B Min Qty: 37 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $10.9400
  • 50 $10.6300
  • 100 $10.3300
$10.3300 / $10.9400 Buy Now
DISTI # 29AK2560
Newark Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant: Yes |Microchip MSC080SMA120B Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 90
  • 1 $13.7800
  • 10 $13.0700
  • 25 $12.1500
  • 50 $10.6600
  • 100 $9.9600
$9.9600 / $13.7800 Buy Now
DISTI # MSC080SMA120B-ND
DigiKey SICFET N-CH 1200V 37A TO247-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube 112
In Stock
  • 1 $12.8000
  • 25 $11.8000
  • 100 $9.6400
$9.6400 / $12.8000 Buy Now
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # 494-MSC080SMA120B
Mouser Electronics MOSFET MOSFET SIC 1200 V 80 mOhm TO-247 RoHS: Compliant 1553
  • 1 $12.8000
  • 30 $11.8000
  • 120 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # MSC080SMA120B
Microchip Technology Inc MOSFET SIC 1200 V 80 mOhm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 15

Alternates Available
  • 1 $12.8000
  • 100 $10.2700
  • 500 $9.5800
$9.5800 / $12.8000 Buy Now
Onlinecomponents.com MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-3 Package. 120 In Stock
45575 Factory Stock
  • 5 $12.7400
  • 30 $11.6300
  • 60 $11.5700
  • 120 $10.0200
  • 270 $9.9700
  • 510 $9.9200
  • 1,020 $9.8700
$9.8700 / $12.7400 Buy Now
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Bulk (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 11 Weeks, 0 Days Container: Bulk 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # MSC080SMA120B
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 91A, 200W Min Qty: 1 6
  • 1 $15.3000
  • 3 $14.2000
  • 10 $13.9000
$13.9000 / $15.3000 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 91A, 200W 15
RFQ
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Bulk (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 11 Weeks, 0 Days Container: Bulk 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
NAC FG, SIC MOSFET, TO-247 RoHS: Compliant Min Qty: 60 Package Multiple: 30 Container: Tube 0
  • 1 $11.2600
  • 100 $10.2100
  • 500 $9.5700
  • 1,000 $9.3400
$9.3400 / $11.2600 Buy Now
DISTI # MSC080SMA120B
Avnet Silica Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 (Alt: MSC080SMA120B) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 5 Days Silica - 0
Buy Now
Chips Pulse Industry Limited TO-247-3 MOSFETs ROHS Purchase Online, Ship Immediately 36
  • 1 $20.7242
  • 10 $19.9152
  • 30 $18.5149
  • 90 $16.5733
$16.5733 / $20.7242 Buy Now
DISTI # MSC080SMA120B
EBV Elektronik Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 (Alt: MSC080SMA120B) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 3941440
element14 Asia-Pacific MOSFET, N-CH, 1.2KV, 37A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 90
  • 1 $13.4495
  • 25 $12.3985
  • 100 $12.1560
$12.1560 / $13.4495 Buy Now
DISTI # 3941440
Farnell MOSFET, N-CH, 1.2KV, 37A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 35 Weeks, 1 Days Container: Each 90
  • 1 $11.7195
  • 25 $10.2033
$10.2033 / $11.7195 Buy Now
LCSC TO-247-3 SiC MOSFETs ROHS 30
  • 1 $23.0269
  • 10 $22.1280
  • 30 $20.5721
  • 90 $18.4148
$18.4148 / $23.0269 Buy Now
Master Electronics MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-3 Package. 120 In Stock
45575 Factory Stock
  • 5 $12.7400
  • 30 $11.6300
  • 60 $11.5700
  • 120 $10.0200
  • 270 $9.9700
  • 510 $9.9200
  • 1,020 $9.8700
$9.8700 / $12.7400 Buy Now

Part Details for MSC080SMA120B

MSC080SMA120B CAD Models

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MSC080SMA120B Part Data Attributes

MSC080SMA120B Microchip Technology Inc
Buy Now Datasheet
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MSC080SMA120B Microchip Technology Inc Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 10 Weeks
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 9 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 91 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for MSC080SMA120B

This table gives cross-reference parts and alternative options found for MSC080SMA120B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCH2080KE
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B vs SCT2080KEC11
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor MSC080SMA120B vs SCT2080KEGC11
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCT2080KE
Part Number Description Manufacturer Compare
NTHL080N120SC1A Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi MSC080SMA120B vs NTHL080N120SC1A
NTHL080N120SC1 Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE onsemi MSC080SMA120B vs NTHL080N120SC1
NVHL080N120SC1A Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified onsemi MSC080SMA120B vs NVHL080N120SC1A
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor MSC080SMA120B vs SCT2080KEGC11
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCH2080KE
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B vs SCT2080KEC11
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor MSC080SMA120B vs S2301
MSC080SMA120S Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc MSC080SMA120B vs MSC080SMA120S

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