Part Details for MSC080SMA120B4 by Microchip Technology Inc
Overview of MSC080SMA120B4 by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MSC080SMA120B4
| Distributor | Stock | Package | QTY Break / Prices | Price Range |
|---|---|---|---|---|
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0 | Tube |
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$10.5900 / $13.1900 |
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Alternates Available |
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$9.8800 / $13.1900 | |
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35 |
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$14.0000 / $17.6000 | |
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39 |
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$17.4313 / $21.0837 | |
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40 | Tube |
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$11.2900 |
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90 | Each |
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$11.0573 / $13.7741 |
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90 | Each |
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$11.2736 / $14.0430 |
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3929 | Tube |
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Part Details for MSC080SMA120B4
MSC080SMA120B4 CAD Models
MSC080SMA120B4 Part Data Attributes
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MSC080SMA120B4
Microchip Technology Inc
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Datasheet
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MSC080SMA120B4
Microchip Technology Inc
Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 12 Weeks | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for MSC080SMA120B4
This table gives cross-reference parts and alternative options found for MSC080SMA120B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MSC080SMA120B | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | MSC080SMA120B4 vs MSC080SMA120B |
| SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | MSC080SMA120B4 vs SCT2080KEGC11 |
| SCT2080KEC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120B4 vs SCT2080KEC11 |
| S2301 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE | ROHM Semiconductor | MSC080SMA120B4 vs S2301 |
| NVHL080N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified | onsemi | MSC080SMA120B4 vs NVHL080N120SC1 |
| MSC080SMA120S | Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | Microchip Technology Inc | MSC080SMA120B4 vs MSC080SMA120S |
| SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120B4 vs SCT3080KLHRC11 |
| NTHL080N120SC1 | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | MSC080SMA120B4 vs NTHL080N120SC1 |