Part Details for MSC080SMA120B4 by Microchip Technology Inc
Overview of MSC080SMA120B4 by Microchip Technology Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for MSC080SMA120B4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK2561
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Newark | Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant: Yes |Microchip MSC080SMA120B4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 60 |
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$10.2800 / $15.8000 | Buy Now |
DISTI #
78AH6585
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Newark | Mosfet Sic 1200 V 80 Mohm To-247-4 4 To-247 Tube Rohs Compliant: Yes |Microchip MSC080SMA120B4 Min Qty: 36 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$10.6400 / $11.2700 | Buy Now |
DISTI #
150-MSC080SMA120B4-ND
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DigiKey | SICFET N-CH 1200V 37A TO247-4 Min Qty: 1 Lead time: 8 Weeks Container: Tube |
94 In Stock |
|
$10.5900 / $13.1900 | Buy Now |
DISTI #
MSC080SMA120B4
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Avnet Americas | Transistor MOSFET N-Channel 1200V 37A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B4) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 8 Weeks, 0 Days Container: Tube | 0 |
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$10.5900 / $13.1900 | Buy Now |
DISTI #
494-MSC080SMA120B4
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Mouser Electronics | MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 RoHS: Compliant | 427 |
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$10.5900 / $13.1900 | Buy Now |
DISTI #
MSC080SMA120B4
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Microchip Technology Inc | MOSFET SIC 1200 V 80 mOhm TO-247-4, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$9.8800 / $13.1900 | Buy Now |
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Future Electronics | 1200V 37A Through Hole Silicon Carbide N-Channel Power MOSFET - TO247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 4Tube |
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$10.3900 / $10.9100 | Buy Now |
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Onlinecomponents.com | MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-4 Package. |
13 In Stock 2610 Factory Stock |
|
$9.5500 / $11.9800 | Buy Now |
DISTI #
MSC080SMA120B4
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Avnet Americas | Transistor MOSFET N-Channel 1200V 37A 3-Pin TO-247 - Bulk (Alt: MSC080SMA120B4) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 11 Weeks, 0 Days Container: Bulk | 0 |
|
$10.5900 / $13.1900 | Buy Now |
DISTI #
MSC080SMA120B4
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 90A, 200W Min Qty: 1 | 35 |
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$14.0000 / $17.6000 | Buy Now |
Part Details for MSC080SMA120B4
MSC080SMA120B4 CAD Models
MSC080SMA120B4 Part Data Attributes
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MSC080SMA120B4
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSC080SMA120B4
Microchip Technology Inc
Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 11 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 37 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
Alternate Parts for MSC080SMA120B4
This table gives cross-reference parts and alternative options found for MSC080SMA120B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MSC080SMA120S | Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | Microchip Technology Inc | MSC080SMA120B4 vs MSC080SMA120S |
MSC080SMA120B | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | MSC080SMA120B4 vs MSC080SMA120B |
SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120B4 vs SCT3080KLHRC11 |
SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | MSC080SMA120B4 vs SCT2080KEGC11 |
SCT2080KEHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120B4 vs SCT2080KEHRC11 |