Datasheets
MSC080SMA120B4 by:

Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Details for MSC080SMA120B4 by Microchip Technology Inc

Overview of MSC080SMA120B4 by Microchip Technology Inc

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Price & Stock for MSC080SMA120B4

Part # Distributor Description Stock Price Buy
DISTI # 29AK2561
Newark Mosfet, N-Ch, 1.2Kv, 37A, To-247 Rohs Compliant: Yes |Microchip MSC080SMA120B4 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 60
  • 1 $15.8000
  • 10 $14.9900
  • 25 $13.9400
  • 60 $12.2200
  • 120 $11.3900
  • 270 $11.0000
  • 510 $10.2800
$10.2800 / $15.8000 Buy Now
DISTI # 78AH6585
Newark Mosfet Sic 1200 V 80 Mohm To-247-4 4 To-247 Tube Rohs Compliant: Yes |Microchip MSC080SMA120B4 Min Qty: 36 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $11.2700
  • 50 $10.9500
  • 100 $10.6400
$10.6400 / $11.2700 Buy Now
DISTI # 150-MSC080SMA120B4-ND
DigiKey SICFET N-CH 1200V 37A TO247-4 Min Qty: 1 Lead time: 8 Weeks Container: Tube 94
In Stock
  • 1 $13.1900
  • 25 $12.1600
  • 100 $10.5900
$10.5900 / $13.1900 Buy Now
DISTI # MSC080SMA120B4
Avnet Americas Transistor MOSFET N-Channel 1200V 37A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B4) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 8 Weeks, 0 Days Container: Tube 0
  • 1 $13.1900
  • 10 $12.1600
  • 100 $10.5900
$10.5900 / $13.1900 Buy Now
DISTI # 494-MSC080SMA120B4
Mouser Electronics MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 RoHS: Compliant 427
  • 1 $13.1900
  • 30 $12.1600
  • 120 $10.5900
$10.5900 / $13.1900 Buy Now
DISTI # MSC080SMA120B4
Microchip Technology Inc MOSFET SIC 1200 V 80 mOhm TO-247-4, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $13.1900
  • 100 $10.5900
  • 500 $9.8800
$9.8800 / $13.1900 Buy Now
Future Electronics 1200V 37A Through Hole Silicon Carbide N-Channel Power MOSFET - TO247-4 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 4
Tube
  • 1 $10.9100
  • 5 $10.7800
  • 25 $10.6500
  • 100 $10.5400
  • 250 $10.3900
$10.3900 / $10.9100 Buy Now
Onlinecomponents.com MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-4 Package. 13 In Stock
2610 Factory Stock
  • 5 $11.9800
  • 30 $10.8000
  • 60 $10.5100
  • 120 $10.0900
  • 270 $9.8500
  • 510 $9.7000
  • 1,020 $9.5500
$9.5500 / $11.9800 Buy Now
DISTI # MSC080SMA120B4
Avnet Americas Transistor MOSFET N-Channel 1200V 37A 3-Pin TO-247 - Bulk (Alt: MSC080SMA120B4) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 11 Weeks, 0 Days Container: Bulk 0
  • 1 $13.1900
  • 10 $12.1600
  • 100 $10.5900
$10.5900 / $13.1900 Buy Now
DISTI # MSC080SMA120B4
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 90A, 200W Min Qty: 1 35
  • 1 $17.6000
  • 3 $15.8400
  • 10 $14.0000
$14.0000 / $17.6000 Buy Now
DISTI # MSC080SMA120B4
Avnet Americas Transistor MOSFET N-Channel 1200V 37A 3-Pin TO-247 - Bulk (Alt: MSC080SMA120B4) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 11 Weeks, 0 Days Container: Bulk 0
  • 1 $13.1900
  • 10 $12.1600
  • 100 $10.5900
$10.5900 / $13.1900 Buy Now
NAC FG, SIC MOSFET, TO-247 4-LEAD RoHS: Compliant Min Qty: 1 Package Multiple: 30 Container: Tube 40
  • 1 $11.6200
  • 100 $10.5300
  • 500 $9.8800
  • 1,000 $9.6300
$9.6300 / $11.6200 Buy Now
DISTI # MSC080SMA120B4
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 204
  • 1 $10.8500
  • 50 $10.5700
  • 100 $10.4300
$10.4300 / $10.8500 Buy Now
DISTI # 3941441
Farnell MOSFET, N-CH, 1.2KV, 37A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 35 Weeks, 1 Days Container: Each 60
  • 1 $12.0784
  • 25 $11.3584
  • 100 $10.6260
$10.6260 / $12.0784 Buy Now
Master Electronics MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-4 Package. 13 In Stock
2610 Factory Stock
  • 5 $11.9900
  • 30 $10.8100
  • 60 $10.5200
  • 120 $10.1000
  • 270 $9.8500
  • 510 $9.7000
  • 1,020 $9.5500
$9.5500 / $11.9900 Buy Now

Part Details for MSC080SMA120B4

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MSC080SMA120B4 Part Data Attributes

MSC080SMA120B4 Microchip Technology Inc
Buy Now Datasheet
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MSC080SMA120B4 Microchip Technology Inc Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 11 Weeks
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 90 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for MSC080SMA120B4

This table gives cross-reference parts and alternative options found for MSC080SMA120B4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MSC080SMA120S Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc MSC080SMA120B4 vs MSC080SMA120S
MSC080SMA120B Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc MSC080SMA120B4 vs MSC080SMA120B
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B4 vs SCT3080KLHRC11
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor MSC080SMA120B4 vs SCT2080KEGC11
SCT2080KEHRC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B4 vs SCT2080KEHRC11

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