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Part Details for MSC080SMA120B4 by Microsemi Corporation
Overview of MSC080SMA120B4 by Microsemi Corporation
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Part Details for MSC080SMA120B4
MSC080SMA120B4 CAD Models
MSC080SMA120B4 Part Data Attributes
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MSC080SMA120B4
Microsemi Corporation
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Datasheet
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MSC080SMA120B4
Microsemi Corporation
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2019-09-20 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (Abs) (ID) | 37 A | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |