MT41K128M16JT-125IT:K
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96
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DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96
MT41K128M16JT-125IT:K
Yes
Yes
Active
MICRON TECHNOLOGY INC
BGA
TFBGA, BGA96,9X16,32
96
EAR99
8542.32.00.36
Micron Technology Inc
5.11
MULTI BANK PAGE BURST
0.225 ns
AUTO/SELF REFRESH
800 MHz
COMMON
8
R-PBGA-B96
e1
14 mm
2147483648 bit
DDR DRAM
16
1
1
96
134217728 words
128000000
SYNCHRONOUS
95 °C
-40 °C
128MX16
3-STATE
PLASTIC/EPOXY
TFBGA
BGA96,9X16,32
RECTANGULAR
GRID ARRAY, FINE PITCH
260
1.35 V
Not Qualified
8192
1.2 mm
8
0.012 A
DRAMs
0.195 mA
1.45 V
1.283 V
1.35 V
YES
CMOS
INDUSTRIAL
Tin/Silver/Copper (Sn/Ag/Cu)
BALL
0.8 mm
BOTTOM
30
8 mm
6,590
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT41K128M16JT-125AIT:K Memory | DDR DRAM, 128MX16, CMOS, PBGA96, FBGA-96 | Micron Technology Inc | MT41K128M16JT-125IT:K vs MT41K128M16JT-125AIT:K |
| MT41K128M16JT-125XIT:K Memory | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | MT41K128M16JT-125IT:K vs MT41K128M16JT-125XIT:K |
| MT41K128M16JT-125AAT:K Memory | DDR DRAM, 128MX16, CMOS, PBGA96, FBGA-96 | Micron Technology Inc | MT41K128M16JT-125IT:K vs MT41K128M16JT-125AAT:K |
| MT41K128M16JT-125M:K Memory | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | MT41K128M16JT-125IT:K vs MT41K128M16JT-125M:K |
| MT41K128M16JT-125:K Memory | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | MT41K128M16JT-125IT:K vs MT41K128M16JT-125:K |
293 of 2,527,556 parts
0% change vs. last year3 of 23,480 parts
0% change vs. last year2 of 3,140 parts
0% change vs. last year
