Datasheets
MT47H64M16NF-25EIT:M by: Micron Technology Inc

DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84

Part Details for MT47H64M16NF-25EIT:M by Micron Technology Inc

Overview of MT47H64M16NF-25EIT:M by Micron Technology Inc

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Price & Stock for MT47H64M16NF-25EIT:M

Part # Distributor Description Stock Price Buy
Quest Components 64M X 16 DDR DRAM, 0.4 ns, PBGA84 334
  • 1 $7.7244
  • 50 $4.7634
  • 211 $4.2484
$4.2484 / $7.7244 Buy Now
Quest Components 64M X 16 DDR DRAM, 0.4 ns, PBGA84 624
  • 1 $14.9828
  • 173 $10.6544
  • 376 $9.9885
$9.9885 / $14.9828 Buy Now
DISTI # SMC-MT47H64M16NF-25EIT:M
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1368
RFQ
New Advantage Corporation 64M X 16, DDR DRAM, 1.8V, FBGA RoHS: Compliant Min Qty: 1 Package Multiple: 1 2502
  • 1 $3.0500
  • 2,000 $2.6200
$2.6200 / $3.0500 Buy Now

Part Details for MT47H64M16NF-25EIT:M

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MT47H64M16NF-25EIT:M Part Data Attributes

MT47H64M16NF-25EIT:M Micron Technology Inc
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MT47H64M16NF-25EIT:M Micron Technology Inc DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description FBGA-84
Pin Count 84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min -40 °C
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Screening Level AEC-Q100
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.26 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm

Alternate Parts for MT47H64M16NF-25EIT:M

This table gives cross-reference parts and alternative options found for MT47H64M16NF-25EIT:M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M16NF-25EIT:M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H64M16NF-25E:MTR DDR DRAM, 64MX16, CMOS, PBGA84, FBGA-84 Micron Technology Inc MT47H64M16NF-25EIT:M vs MT47H64M16NF-25E:MTR
IS43DR16640C-25DBLA1 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc MT47H64M16NF-25EIT:M vs IS43DR16640C-25DBLA1
IS43DR16640C-25DBLI DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 Integrated Silicon Solution Inc MT47H64M16NF-25EIT:M vs IS43DR16640C-25DBLI
W971GG6KB-25 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 Winbond Electronics Corp MT47H64M16NF-25EIT:M vs W971GG6KB-25
IS43DR16640C-25DBL DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 Integrated Silicon Solution Inc MT47H64M16NF-25EIT:M vs IS43DR16640C-25DBL
IS43DR16640C-25DBLA2 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc MT47H64M16NF-25EIT:M vs IS43DR16640C-25DBLA2
Part Number Description Manufacturer Compare
HYB18TC1G160CF-25F DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H64M16NF-25EIT:M vs HYB18TC1G160CF-25F
HYB18T1G160CFL-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H64M16NF-25EIT:M vs HYB18T1G160CFL-2.5
MT47H32M16CC-25EAT:B DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H64M16NF-25EIT:M vs MT47H32M16CC-25EAT:B
HYI18T1G160BC-2.5F DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG MT47H64M16NF-25EIT:M vs HYI18T1G160BC-2.5F
K4T1G164QE-HCF70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor MT47H64M16NF-25EIT:M vs K4T1G164QE-HCF70
MT47H32M16GC-25EAT:B DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H64M16NF-25EIT:M vs MT47H32M16GC-25EAT:B
HYB18TC1G160BF-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H64M16NF-25EIT:M vs HYB18TC1G160BF-2.5
IS43DR16640C-25DBLI DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84 Integrated Silicon Solution Inc MT47H64M16NF-25EIT:M vs IS43DR16640C-25DBLI
K4T1G164QD-ZCE70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H64M16NF-25EIT:M vs K4T1G164QD-ZCE70
HYI18T1G160BF-2.5 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H64M16NF-25EIT:M vs HYI18T1G160BF-2.5

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