There are no models available for this part yet.
Overview of MTD5N05 by Motorola Mobility LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MTD5N05 by Motorola Mobility LLC
Part Data Attributes for MTD5N05 by Motorola Mobility LLC
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MOTOROLA INC
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
50 V
|
Drain Current-Max (ID)
|
5 A
|
Drain-source On Resistance-Max
|
0.4 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
50 pF
|
JEDEC-95 Code
|
TO-252
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
20 W
|
Power Dissipation-Max (Abs)
|
20 W
|
Pulsed Drain Current-Max (IDM)
|
14 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
100 ns
|
Turn-on Time-Max (ton)
|
50 ns
|
Alternate Parts for MTD5N05
This table gives cross-reference parts and alternative options found for MTD5N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD5N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRL3705ZSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | MTD5N05 vs IRL3705ZSPBF |
RFG45N06LE | 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | MTD5N05 vs RFG45N06LE |
IRF453 | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,11A I(D),TO-204AA | Intersil Corporation | MTD5N05 vs IRF453 |
RF1S45N06LESM | 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | MTD5N05 vs RF1S45N06LESM |
MTD4P06 | 4A, 60V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 | Motorola Mobility LLC | MTD5N05 vs MTD4P06 |
MTP2N20 | Power Field-Effect Transistor, 2A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | MTD5N05 vs MTP2N20 |
IRFZ46NSTRLPBF | Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | MTD5N05 vs IRFZ46NSTRLPBF |
MTM7N50 | 7A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | MTD5N05 vs MTM7N50 |
IRF4104PBF | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | MTD5N05 vs IRF4104PBF |
IRF1010EZPBF | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | MTD5N05 vs IRF1010EZPBF |