Datasheets
MTP3N45 by:

3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP3N45 by Motorola Mobility LLC

Overview of MTP3N45 by Motorola Mobility LLC

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Part Details for MTP3N45

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MTP3N45 Part Data Attributes

MTP3N45 Motorola Mobility LLC
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MTP3N45 Motorola Mobility LLC 3A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 55 ns

Alternate Parts for MTP3N45

This table gives cross-reference parts and alternative options found for MTP3N45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP3N45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ74 2.4A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited MTP3N45 vs BUZ74
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTP3N45 vs IRF821
MTP2N45 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Semiconductor Technology Inc MTP3N45 vs MTP2N45
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors MTP3N45 vs IRF821
MTP1N45 Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTP3N45 vs MTP1N45
IRF821-001 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP3N45 vs IRF821-001
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP3N45 vs IRF823
IRF821-009 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP3N45 vs IRF821-009
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTP3N45 vs IRF823
IRF822 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MTP3N45 vs IRF822
Part Number Description Manufacturer Compare
IRF821 3A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MTP3N45 vs IRF821
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens MTP3N45 vs BUZ74
MTP1N45 1A, 450V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP3N45 vs MTP1N45
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG MTP3N45 vs BUZ74
IRF820PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP3N45 vs IRF820PBF
RFP3N45 Power Field-Effect Transistor, 3A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor MTP3N45 vs RFP3N45
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP3N45 vs IRF823
IRF821 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP3N45 vs IRF821
IRF822 Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP3N45 vs IRF822
IRF822 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MTP3N45 vs IRF822

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