MTW6N60E
Description: 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Overview of MTW6N60E by Motorola Mobility LLC

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

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Part Data Attributes for MTW6N60E by Motorola Mobility LLC

MTW6N60E
Motorola Mobility LLC
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
6 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. MTW6N60E
    Motorola Mobility LLC
    6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
    VS

Alternate Parts for MTW6N60E

This table gives cross-reference parts and alternative options found for MTW6N60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW6N60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MTW6N60E Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Motorola Semiconductor Products MTW6N60E vs MTW6N60E
Part Number Description Manufacturer Compare
IRF3710ZSTRLPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTW6N60E vs IRF3710ZSTRLPBF
AUIRFS4610 Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier MTW6N60E vs AUIRFS4610
MTD5N06 5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC MTW6N60E vs MTD5N06
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTW6N60E vs IRF540NSTRLPBF
IRF1405ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTW6N60E vs IRF1405ZPBF
AUIRFZ46NS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier MTW6N60E vs AUIRFZ46NS
IRF3710ZSPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTW6N60E vs IRF3710ZSPBF
IRF1405PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTW6N60E vs IRF1405PBF
IRFS4321TRRPBF Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTW6N60E vs IRFS4321TRRPBF
IRF453 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,11A I(D),TO-204AA Intersil Corporation MTW6N60E vs IRF453

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