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Part Details for MUN5313DW1T1G by onsemi
Results Overview of MUN5313DW1T1G by onsemi
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
MUN5313DW1T1G Information
MUN5313DW1T1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MUN5313DW1T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81Y6855
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Newark | Trans, 50V, 47/47Kohm, Sot-363, Digital Transistor Polarity:Npn And Pnp Complement, Collector Emitter Voltage V(Br)Ceo:50V, Continuous Collector Current Ic:100Ma, Base Input Resistor R1:47Kohm, Base-Emitter Resistor R2:47Kohm, Rohs Compliant: Yes |Onsemi MUN5313DW1T1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2125 |
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$0.0620 / $0.2210 | Buy Now |
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DISTI #
88H4941
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Newark | Brt Transistor, 50V, 47K/47Kohm, Sc88, Transistor Polarity:Npn And Pnp Complement, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:50V, Continuous Collector Current:100Ma, Base Input Resistor R1:47Kohm Rohs Compliant: Yes |Onsemi MUN5313DW1T1G RoHS: Compliant Min Qty: 9000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0410 / $0.0540 | Buy Now |
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DISTI #
MUN5313DW1T1G
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Avnet Americas | - Tape and Reel (Alt: MUN5313DW1T1G) COO: China RoHS: Compliant Min Qty: 33000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 1 Factory Stock |
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$0.0263 / $0.0268 | Buy Now |
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Bristol Electronics | Min Qty: 36 | 3969 |
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$0.0285 / $0.1425 | Buy Now |
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Bristol Electronics | 558 |
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RFQ | ||
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Rochester Electronics | Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP RoHS: Compliant Status: Active Min Qty: 1 | 30341 |
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$0.0211 / $0.0340 | Buy Now |
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DISTI #
MUN5313DW1T1G
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TME | Transistor: NPN / PNP, bipolar, BRT,complementary pair, 50V, 0.1A Min Qty: 1 | 2920 |
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$0.0338 / $0.2200 | Buy Now |
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ComSIT USA | COMPLEMENTARY BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 3503 |
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RFQ | |
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DISTI #
MUN5313DW1T1G
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Avnet Asia | (Alt: MUN5313DW1T1G) RoHS: Compliant Min Qty: 33000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 0 |
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RFQ |
Part Details for MUN5313DW1T1G
MUN5313DW1T1G CAD Models
MUN5313DW1T1G Part Data Attributes
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MUN5313DW1T1G
onsemi
Buy Now
Datasheet
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Compare Parts:
MUN5313DW1T1G
onsemi
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | |
| Pin Count | 6 | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN AND PNP | |
| Power Dissipation-Max (Abs) | 0.385 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MUN5313DW1T1G
This table gives cross-reference parts and alternative options found for MUN5313DW1T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUN5313DW1T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MUN5313DW1T1 | Motorola Mobility LLC | Check for Price | 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR | MUN5313DW1T1G vs MUN5313DW1T1 |
MUN5313DW1T1G Frequently Asked Questions (FAQ)
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A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and a thermal relief pattern on the top layer. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2 oz copper thickness and a thermal via array under the device to improve heat dissipation.
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To ensure proper biasing, it's essential to follow the recommended operating conditions outlined in the datasheet. This includes setting the input voltage (VCC) to the recommended range (typically 3.3V or 5V), and ensuring the output voltage (VOUT) is within the specified range. Additionally, it's crucial to decouple the input and output pins with suitable capacitors to minimize noise and ripple.
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To ensure EMI and EMC compliance, it's essential to follow proper PCB layout and design practices. This includes using a solid ground plane, minimizing trace lengths, and using shielding or filtering components as needed. Additionally, it's recommended to use a common-mode choke or ferrite bead to reduce EMI emissions. It's also important to follow the recommended operating frequency range and ensure the device is properly decoupled.
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The MUN5313DW1T1G has built-in overvoltage protection (OVP) and short-circuit protection (SCP). However, it's still recommended to add external protection components, such as a TVS diode or a fuse, to ensure the device is protected from voltage spikes and short-circuit conditions. Additionally, it's essential to follow proper PCB design practices to minimize the risk of electrical overstress (EOS).
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For high-power applications, it's crucial to ensure proper thermal management to prevent overheating. This includes using a heat sink or thermal interface material (TIM) to improve heat dissipation. Additionally, it's recommended to use a thermal relief pattern on the PCB and to ensure good airflow around the device. It's also important to monitor the device's junction temperature (TJ) and ensure it remains within the specified range.