Part Details for MUPTB28E3 by Microsemi Corporation
Overview of MUPTB28E3 by Microsemi Corporation
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Applications
Consumer Electronics
Environmental Monitoring
Industrial Automation
Aerospace and Defense
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Telecommunications
Communication and Networking
Part Details for MUPTB28E3
MUPTB28E3 CAD Models
MUPTB28E3 Part Data Attributes
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MUPTB28E3
Microsemi Corporation
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MUPTB28E3
Microsemi Corporation
Trans Voltage Suppressor Diode,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Breakdown Voltage-Min | 31 V | |
Clamping Voltage-Max | 47.8 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-216AA | |
JESD-30 Code | S-PSSO-G1 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 1000 W | |
Number of Elements | 1 | |
Number of Terminals | 1 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity | BIDIRECTIONAL | |
Power Dissipation-Max | 2.5 W | |
Reference Standard | AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 | |
Rep Pk Reverse Voltage-Max | 28 V | |
Reverse Current-Max | 1 µA | |
Reverse Test Voltage | 28 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE |