Part Details for MWI30-06A7 by Littelfuse Inc
Overview of MWI30-06A7 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for MWI30-06A7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH5635
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Newark | Igbt Module - Sixpack E2-Pack-Pfp/Box |Littelfuse MWI30-06A7 RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for MWI30-06A7
MWI30-06A7 CAD Models
MWI30-06A7 Part Data Attributes
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MWI30-06A7
Littelfuse Inc
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Datasheet
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MWI30-06A7
Littelfuse Inc
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, SIXPACK-17
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-XUFM-X11 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 45 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X11 | |
JESD-609 Code | e3 | |
Number of Elements | 6 | |
Number of Terminals | 11 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 310 ns | |
Turn-on Time-Nom (ton) | 100 ns | |
VCEsat-Max | 2.4 V |
Alternate Parts for MWI30-06A7
This table gives cross-reference parts and alternative options found for MWI30-06A7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MWI30-06A7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM30TF-12H | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | MWI30-06A7 vs CM30TF-12H |
6MBI30FA-060 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M603, 11 PIN | Fuji Electric Co Ltd | MWI30-06A7 vs 6MBI30FA-060 |
MG30J6ES50 | TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-72A5A, 21 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MWI30-06A7 vs MG30J6ES50 |
6MBI30L-060 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | MWI30-06A7 vs 6MBI30L-060 |
6MBI30F-060 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, M607, 17 PIN | Fuji Electric Co Ltd | MWI30-06A7 vs 6MBI30F-060 |