Datasheets
MWI35-12E7 by: IXYS Corporation

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel

Part Details for MWI35-12E7 by IXYS Corporation

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Part Details for MWI35-12E7

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MWI35-12E7 Part Data Attributes

MWI35-12E7 IXYS Corporation
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MWI35-12E7 IXYS Corporation Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description FLANGE MOUNT, R-XUFM-X17
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 52 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON

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