Datasheets
MX1011B430W by:

TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power

Part Details for MX1011B430W by NXP Semiconductors

Overview of MX1011B430W by NXP Semiconductors

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Part Details for MX1011B430W

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MX1011B430W Part Data Attributes

MX1011B430W NXP Semiconductors
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MX1011B430W NXP Semiconductors TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection BASE
Collector-Emitter Voltage-Max 20 V
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Gain-Min (Gp) 6.7 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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