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P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ, SOT-23-3, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NDS352AP by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26AC2659
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Newark | 30V Ssot-3 Pch Rohs Compliant: Yes |Onsemi NDS352AP RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 21000 |
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$0.1270 / $0.1940 | Buy Now |
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DISTI #
83AK7124
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Newark | Fets - Single, Transistor Polarity:P Channel, Continuous Drain Current Id:900Ma, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.25Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.7V, Power Dissipation Pd:500Mw, Rohs Compliant: Yes |Onsemi NDS352AP RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 6000 |
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$0.1220 / $0.1550 | Buy Now |
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DISTI #
26M1843
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Newark | Mosfet, P-Ch, 30 V, 0.9 A, Supersot-3, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:900Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi NDS352AP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 89 |
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$0.1890 / $0.5900 | Buy Now |
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DISTI #
29X6826
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Newark | Mosfet, P Channel, 30V, 0.9A, Supersot-3, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:900Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi NDS352AP RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1270 / $0.1940 | Buy Now |
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DISTI #
NDS352AP
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Avnet Americas | - Tape and Reel (Alt: NDS352AP) COO: Philippines (the) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 21000 |
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$0.0652 / $0.0737 | Buy Now |
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Bristol Electronics | 7224 |
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RFQ | ||
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Bristol Electronics | 259 |
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RFQ | ||
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Rochester Electronics | Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 7258 |
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$0.1031 / $0.1663 | Buy Now |
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DISTI #
NDS352AP
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TME | Transistor: P-MOSFET, unipolar, -30V, -0.9A, 0.5W, SuperSOT-3 Min Qty: 1 | 314 |
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$0.1830 / $0.5400 | Buy Now |
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Ameya Holding Limited | P-Channel 30 V 0.5 Ω Surface Mount Field Effect Transistor - SSOT-3 | 2250 |
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RFQ |
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NDS352AP
onsemi
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Datasheet
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NDS352AP
onsemi
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ, SOT-23-3, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-23-3 | |
| Manufacturer Package Code | 527AG | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Additional Feature | Logic Level Compatible | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 0.9 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for NDS352AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS352AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDS352AP/L99Z | Texas Instruments | Check for Price | 900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | NDS352AP vs NDS352AP/L99Z |
The recommended operating voltage range for the NDS352AP is 2.7V to 5.5V.
To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 10uF capacitor to ground. Also, ensure the input signals are within the recommended voltage range.
The maximum allowable power dissipation for the NDS352AP is 500mW. Exceeding this limit may cause the device to overheat and malfunction.
To prevent electrostatic discharge (ESD) damage, handle the NDS352AP by the body or use an anti-static wrist strap. Avoid touching the pins or exposing the device to static-prone environments.
The NDS352AP is rated for operation up to 125°C. However, it's recommended to derate the power dissipation accordingly to ensure reliable operation in high-temperature environments.