Datasheets
NDT2955 by:

2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET

Part Details for NDT2955 by Rochester Electronics LLC

Overview of NDT2955 by Rochester Electronics LLC

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Part Details for NDT2955

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NDT2955 Part Data Attributes:

NDT2955 Rochester Electronics LLC
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NDT2955 Rochester Electronics LLC 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 174 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDT2955

This table gives cross-reference parts and alternative options found for NDT2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi NDT2955 vs NDT2955
NDT2955_NL Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955_NL
NDT2955 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955
Part Number Description Manufacturer Compare
RFT1P06E Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs RFT1P06E
RFT1P06E 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET Intersil Corporation NDT2955 vs RFT1P06E
NDT2955_NL Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955_NL
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi NDT2955 vs NDT2955
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier NDT2955 vs IRFL9014TRPBF
BSP170P Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens NDT2955 vs BSP170P
BSP613P Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG NDT2955 vs BSP613P
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier NDT2955 vs IRFL9014
NDT2955 Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955
BSP170P Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4 Infineon Technologies AG NDT2955 vs BSP170P

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