Part Details for NE32584C-T1A by Renesas Electronics Corporation
Overview of NE32584C-T1A by Renesas Electronics Corporation
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for NE32584C-T1A
NE32584C-T1A CAD Models
NE32584C-T1A Part Data Attributes
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NE32584C-T1A
Renesas Electronics Corporation
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NE32584C-T1A
Renesas Electronics Corporation
NE32584C-T1A
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.02 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | X-CXMW-F4 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | UNSPECIFIED | |
| Package Style | MICROWAVE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 11 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | FLAT | |
| Terminal Position | UNSPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE32584C-T1A
This table gives cross-reference parts and alternative options found for NE32584C-T1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE32584C-T1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE32584C-S | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84C, 4 PIN | NEC Compound Semiconductor Devices Ltd | NE32584C-T1A vs NE32584C-S |
| NE32584C-T1 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | NE32584C-T1A vs NE32584C-T1 |
| NE32584C-S | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET | California Eastern Laboratories (CEL) | NE32584C-T1A vs NE32584C-S |
| NE32584C-T1A | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | NE32584C-T1A vs NE32584C-T1A |
| NE32584C-T1 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84C, 4 PIN | NEC Electronics America Inc | NE32584C-T1A vs NE32584C-T1 |
| NE32584C-T1 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET | California Eastern Laboratories (CEL) | NE32584C-T1A vs NE32584C-T1 |