Datasheets
NEM080481E-12 by: California Eastern Laboratories (CEL)

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for NEM080481E-12 by California Eastern Laboratories (CEL)

Overview of NEM080481E-12 by California Eastern Laboratories (CEL)

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for NEM080481E-12

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NEM080481E-12 Part Data Attributes

NEM080481E-12 California Eastern Laboratories (CEL)
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NEM080481E-12 California Eastern Laboratories (CEL) RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 1.5 A
Collector-Base Capacitance-Max 10 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 17.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NEM080481E-12

This table gives cross-reference parts and alternative options found for NEM080481E-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NEM080481E-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF1029 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NEM080481E-12 vs MRF1029
MRF839F RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products NEM080481E-12 vs MRF839F
MLN1033S RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc NEM080481E-12 vs MLN1033S
MRF839F RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-6 Advanced Semiconductor Inc NEM080481E-12 vs MRF839F

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