Part Details for NGTB03N60R2DT4G by onsemi
Overview of NGTB03N60R2DT4G by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for NGTB03N60R2DT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | NGTB03N60 - IGBT, 600 V, 4.5 A, N-Channel RoHS: Compliant Status: Active Min Qty: 1 | 2002 |
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$0.2901 / $0.3413 | Buy Now |
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DISTI #
2492864
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.8880 | Buy Now |
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DISTI #
2492864
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Farnell | IGBT, SINGLE, 600V, 9A, TO-252-3 RoHS: Compliant Min Qty: 1 Lead time: 22 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.4808 | Buy Now |
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DISTI #
2492864RL
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Farnell | IGBT, SINGLE, 600V, 9A, TO-252-3 RoHS: Compliant Min Qty: 1 Lead time: 22 Weeks, 1 Days Container: Reel | 0 |
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$0.4808 | Buy Now |
Part Details for NGTB03N60R2DT4G
NGTB03N60R2DT4G CAD Models
NGTB03N60R2DT4G Part Data Attributes
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NGTB03N60R2DT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NGTB03N60R2DT4G
onsemi
IGBT, 600 V, 4.5 A, N-Channel, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3/2 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 9 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 49 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 105 ns | |
| Turn-on Time-Nom (ton) | 134 ns | |
| VCEsat-Max | 2.1 V |