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Part Details for NSBC114EDXV6T1G by onsemi
Results Overview of NSBC114EDXV6T1G by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (3 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NSBC114EDXV6T1G Information
NSBC114EDXV6T1G by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NSBC114EDXV6T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42K2319
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Newark | Brt Transistor, 50V, 10K/10Kohm, Sot-563, Full Reel, Transistor Polarity:Dual Npn, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:-, Continuous Collector Current:100Ma, Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi NSBC114EDXV6T1G RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0710 / $0.1080 | Buy Now |
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DISTI #
09R9606
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Newark | Brt Transistor, 50V, 10K/10Kohm, Sot-563, Transistor Polarity:Dual Npn, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:-, Continuous Collector Current:100Ma, Base Input Resistor R1:10Kohm, No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi NSBC114EDXV6T1G RoHS: Compliant Min Qty: 12000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.0590 / $0.0620 | Buy Now |
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DISTI #
NSBC114EDXV6T1G
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Avnet Americas | Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm - Tape and Reel (Alt: NSBC114EDXV6T1G) COO: Malaysia RoHS: Compliant Min Qty: 16000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.0484 / $0.0516 | Buy Now |
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Bristol Electronics | Min Qty: 20 | 6835 |
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$0.0394 / $0.2625 | Buy Now |
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DISTI #
NSBC114EDXV6T1G
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TME | Transistor: NPN x2, bipolar, BRT, 50V, 100mA, 500mW, SOT563, R1: 10kΩ Min Qty: 1 | 0 |
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$0.0659 / $0.3500 | RFQ |
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ComSIT USA | AVAILABLE EU | 2476 |
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RFQ | |
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DISTI #
NSBC114EDXV6T1G
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IBS Electronics | NSBC114EDXV6T1G by ONSEMI is a dual NPN SMT bias resistor transistor in a SOT-563 package, rated for 50V and 100mA, ideal for compact, high-density applications. Min Qty: 4000 Package Multiple: 1 | 12000 |
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$0.0686 / $0.0727 | Buy Now |
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DISTI #
NSBC114EDXV6T1G
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Avnet Asia | Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm (Alt: NSBC114EDXV6T1G) RoHS: Compliant Min Qty: 16000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
NSBC114EDXV6T1G
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Avnet Silica | Bipolar PreBiased Digital Transistor Dual NPN 50 V 100 mA 10 kohm 10 kohm (Alt: NSBC114EDXV6T1G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | BipolarPre-Biased/DigitalTransistor,DualNPN,50V,100mA,10kohm,10kohm | 152500 |
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RFQ |
Part Details for NSBC114EDXV6T1G
NSBC114EDXV6T1G CAD Models
NSBC114EDXV6T1G Part Data Attributes
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NSBC114EDXV6T1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NSBC114EDXV6T1G
onsemi
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-563, 6 LEAD | |
| Pin Count | 6 | |
| Manufacturer Package Code | 463A-01 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Built In Bias Resistor Ratio Is 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | Separate, 2 Elements With Built-In Resistor | |
| DC Current Gain-Min (hFE) | 35 | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NSBC114EDXV6T1G
This table gives cross-reference parts and alternative options found for NSBC114EDXV6T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NSBC114EDXV6T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NSBC114EDXV6T1 | onsemi | Check for Price | 100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN | NSBC114EDXV6T1G vs NSBC114EDXV6T1 |
| NSBC114EDXV6T5 | Rochester Electronics LLC | Check for Price | 100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN | NSBC114EDXV6T1G vs NSBC114EDXV6T5 |
| NSBC114EDXV6T5 | onsemi | Check for Price | 100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN | NSBC114EDXV6T1G vs NSBC114EDXV6T5 |
NSBC114EDXV6T1G Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
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Ensure that the device is operated within the recommended voltage and current ratings, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.
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The critical timing parameters include the input rise and fall times, propagation delay, and output enable/disable times. These parameters are critical for ensuring reliable data transmission and reception.
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The NSBC114EDXV6T1G has built-in ESD protection, but additional protection measures can be taken, such as using ESD-protection diodes or resistors, and following proper handling and storage procedures to prevent ESD damage.
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The power sequencing requirements include ensuring that the power supply voltage (VCC) is applied before the input signals, and that the power-down sequence is followed to prevent damage to the device.