Part Details for NSVT65010MMR6T1G by onsemi
Overview of NSVT65010MMR6T1G by onsemi
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Part Details for NSVT65010MMR6T1G
NSVT65010MMR6T1G CAD Models
NSVT65010MMR6T1G Part Data Attributes
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NSVT65010MMR6T1G
onsemi
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Datasheet
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NSVT65010MMR6T1G
onsemi
Small Signal Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.38 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.65 V |