Part Details for NTD3055L104-1G by onsemi
Results Overview of NTD3055L104-1G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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NTD3055L104-1G Information
NTD3055L104-1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTD3055L104-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82Y7096
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Newark | Mosfet, N-Ch, 60V, 12A, To-251-3, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.089Ohm, Rds(On) Test Voltage Vgs:5V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Onsemi NTD3055L104-1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Bristol Electronics | 100 |
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RFQ | ||
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Flip Electronics | Stock, Ship Today | 48750 |
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RFQ | |
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Vyrian | Transistors | 284 |
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RFQ |
US Tariff Estimator: NTD3055L104-1G by onsemi
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for NTD3055L104-1G
NTD3055L104-1G CAD Models
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NTD3055L104-1G Part Data Attributes
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NTD3055L104-1G
onsemi
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Datasheet
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NTD3055L104-1G
onsemi
Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK INSERTION MOUNT, 75-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 61 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.104 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 48 W | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NTD3055L104-1G
This table gives cross-reference parts and alternative options found for NTD3055L104-1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD3055L104-1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| BUK7575-55A | Nexperia | Check for Price | Power Field-Effect Transistor | NTD3055L104-1G vs BUK7575-55A |
| HUF75329D3ST_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | NTD3055L104-1G vs HUF75329D3ST_NL |
| BUZ10 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTD3055L104-1G vs BUZ10 |
| HUF76423D3S | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | NTD3055L104-1G vs HUF76423D3S |
| RFD14N05 | Intersil Corporation | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | NTD3055L104-1G vs RFD14N05 |
| BUK553-60B | NXP Semiconductors | Check for Price | TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NTD3055L104-1G vs BUK553-60B |
| FDB045AN08A0_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | NTD3055L104-1G vs FDB045AN08A0_NL |
| HUFA76419D3S | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | NTD3055L104-1G vs HUFA76419D3S |
| HUF76419D3ST_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | NTD3055L104-1G vs HUF76419D3ST_NL |
| 2SK2412-AZ | Renesas Electronics Corporation | Check for Price | Switching N-Channel Power Mosfet, MP-45F, /Bag | NTD3055L104-1G vs 2SK2412-AZ |
NTD3055L104-1G Frequently Asked Questions (FAQ)
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The recommended PCB footprint for NTD3055L104-1G is a 5x5mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
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To ensure reliable operation of NTD3055L104-1G in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal vias, and ensuring good airflow around the device.
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The maximum allowed voltage on the input pins of NTD3055L104-1G is 5.5V, which is the absolute maximum rating. Operating the device beyond this voltage can cause permanent damage.
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Yes, NTD3055L104-1G can be used in a switching regulator application, but it is essential to ensure that the device is properly biased and that the switching frequency is within the recommended range to avoid oscillations and ensure stable operation.
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To troubleshoot issues with NTD3055L104-1G, it is recommended to follow a systematic approach, including checking the power supply, input voltage, and output current, as well as verifying the device's thermal and electrical characteristics.