NTE366
NTE Electronics Inc
Description: RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

Overview of NTE366 by NTE Electronics Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for NTE366 by NTE Electronics Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 31C3978
Newark Transistor, bjt, npn,16V V(Br)Ceo,6A I(C),sot-119 |Nte Electronics NTE366 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Onlinecomponents.com Transistor NPN Silicon 36V IC=6A Po=25W 407-512mhz RF Power Output RoHS: Compliant 1 In Stock
  • 1 $70.8100
  • 5 $57.1900
  • 10 $56.2800
  • 25 $52.9200
  • 50 $50.6300
  • 100 $49.2200
  • 250 $47.8700
$47.8700 / $70.8100 Buy Now
Bristol Electronics   Min Qty: 1 2
  • 1 $42.0000
$42.0000 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN 3
  • 1 $46.5563
$46.5563 Buy Now
Quest Components RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN 1
  • 1 $45.5000
$45.5000 Buy Now

CAD Models for NTE366 by NTE Electronics Inc
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Part Data Attributes for NTE366 by NTE Electronics Inc

NTE366
NTE Electronics Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
NTE ELECTRONICS INC
Package Description
FLANGE MOUNT, O-MRFM-F4
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Collector Current-Max (IC)
4 A
Collector-Base Capacitance-Max
125 pF
Collector-Emitter Voltage-Max
16 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
40
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
O-MRFM-F4
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
NPN
Power Dissipation Ambient-Max
117 W
Power Dissipation-Max (Abs)
117 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. NTE366
    NTE Electronics Inc
    RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
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Alternate Parts for NTE366

This table gives cross-reference parts and alternative options found for NTE366. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE366, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BLU20/12 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc NTE366 vs BLU20/12
MRF641 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc NTE366 vs MRF641
MRF644 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc NTE366 vs MRF644
SD1429 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 Microsemi Corporation NTE366 vs SD1429
SD1429 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M111, 6 PIN Advanced Power Technology NTE366 vs SD1429
SD1422 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 Microsemi Corporation NTE366 vs SD1422
NTE480 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN NTE Electronics Inc NTE366 vs NTE480
MRF641 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC NTE366 vs MRF641

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