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Part Details for NTHC5513T1G by onsemi
Results Overview of NTHC5513T1G by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTHC5513T1G Information
NTHC5513T1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHC5513T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09R9651
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Newark | Dual N/P Channel Mosfet, 20V, 1206A, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:2.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHC5513T1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
83H7825
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Newark | Dual N/P Channel Mosfet, 20V, 1206A, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:2.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHC5513T1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
70341329
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RS | NTHC5513T1G DUAL N/P-CHANNEL MOSFET TRANSISTOR, 3 A, 3.9 A, 20 V, 8-PIN CHIPFET Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
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$0.8700 / $1.0200 | RFQ |
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DISTI #
NTHC5513T1G
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TME | Transistor: N/P-MOSFET, unipolar, complementary pair, 20/-20V Min Qty: 1 | 0 |
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$0.7200 / $1.5300 | RFQ |
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Chip Stock | NTHC5513:PowerMOSFET20V3.9A80mOhmDualComplementaryChipFET | 15190 |
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RFQ | |
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Flip Electronics | Stock, Ship Today | 81000 |
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RFQ | |
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Win Source Electronics | MOSFET N/P-CH 20V 1206A | 11690 |
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$2.7273 / $4.0909 | Buy Now |
Part Details for NTHC5513T1G
NTHC5513T1G CAD Models
NTHC5513T1G Part Data Attributes
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NTHC5513T1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHC5513T1G
onsemi
Complementary ChipFET™ Power MOSFET 20V, ChipFET, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | ChipFET | |
| Package Description | Chipfet-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Separate, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel And P-Channel | |
| Power Dissipation-Max (Abs) | 1.1 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | C Bend | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
NTHC5513T1G Frequently Asked Questions (FAQ)
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A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an internal or bottom-side copper plane.
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Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to keep the junction temperature below the maximum rating.
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The NTHC5513T1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
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Yes, the NTHC5513T1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and that the application meets the required reliability and qualification standards.
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Use a systematic approach to troubleshoot issues, starting with a review of the device's operating conditions, PCB layout, and component selection. Check for proper power supply decoupling, signal integrity, and thermal management. Consult the datasheet and application notes for guidance on troubleshooting and fault diagnosis.