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Transistors / Power Field-Effect Transistors / NTMD4N03R2
Datasheets
NTMD4N03R2 by:

4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8

Part Details for NTMD4N03R2 by onsemi

Overview of NTMD4N03R2 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Motor control systems

Price & Stock for NTMD4N03R2

Part # Distributor Description Stock Price Buy
Bristol Electronics   46
RFQ
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 707
  • 1 $0.3699
  • 66 $0.2466
  • 244 $0.1726
$0.1726 / $0.3699 Buy Now
Rochester Electronics NTMD4N03 - Power Field-Effect Transistor, 4A, 30V, 0.06ohm, 2-Element, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 15
  • 1 $0.1934
  • 25 $0.1895
  • 100 $0.1818
  • 500 $0.1741
  • 1,000 $0.1644
$0.1644 / $0.1934 Buy Now

Part Details for NTMD4N03R2

NTMD4N03R2 CAD Models

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NTMD4N03R2 Part Data Attributes:

Parametric Data
NTMD4N03R2 onsemi
Buy Now Datasheet
Compare Parts:
NTMD4N03R2 onsemi 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT
Package Description MINIATURE, CASE 751-07, SOIC-8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 80 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTMD4N03R2

This table gives cross-reference parts and alternative options found for NTMD4N03R2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMD4N03R2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTMD4N03R2G Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8, SOIC-8 Narrow Body, 2500-REEL onsemi NTMD4N03R2 vs NTMD4N03R2G
NTMD4N03R2G 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC NTMD4N03R2 vs NTMD4N03R2G
NTMD4N03R2 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC NTMD4N03R2 vs NTMD4N03R2
Part Number Description Manufacturer Compare
BSO303SPHXUMA1 Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG NTMD4N03R2 vs BSO303SPHXUMA1
FDS9953AL86Z Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NTMD4N03R2 vs FDS9953AL86Z
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation NTMD4N03R2 vs HUF76113DK8T
HP4936DY 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation NTMD4N03R2 vs HP4936DY
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG NTMD4N03R2 vs BSO305N
RF1K49223 Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor NTMD4N03R2 vs RF1K49223
HAT1038R 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation NTMD4N03R2 vs HAT1038R
RF1K4922396 2.5A, 30V, 0.36ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation NTMD4N03R2 vs RF1K4922396
NDS9953AD84Z Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NTMD4N03R2 vs NDS9953AD84Z
BSO303SPH Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG NTMD4N03R2 vs BSO303SPH

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