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Transistors / Power Field-Effect Transistors / NTMD6N02R2G
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NTMD6N02R2G by:

Dual N-Channel Enhancement Mode Power MOSFET 20V, 6.5A, 35mΩ, SOIC-8 Narrow Body, 2500-REEL

Part Details for NTMD6N02R2G by onsemi

Overview of NTMD6N02R2G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for NTMD6N02R2G

Part # Distributor Description Stock Price Buy
DISTI # NTMD6N02R2GOSCT-ND
DigiKey MOSFET 2N-CH 20V 3.92A 8SOIC Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9748
In Stock
  • 1 $0.8500
  • 10 $0.7360
  • 100 $0.5097
  • 500 $0.4259
  • 1,000 $0.3625
  • 2,500 $0.3228
  • 5,000 $0.3058
  • 12,500 $0.2832
  • 25,000 $0.2804
$0.2804 / $0.8500 Buy Now
DISTI # NTMD6N02R2G
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3320
  • 5,000 $0.3230
  • 10,000 $0.3140
  • 15,000 $0.3050
  • 20,000 $0.2961
  • 25,000 $0.2871
  • 250,000 $0.2781
$0.2781 / $0.3320 Buy Now
DISTI # 863-NTMD6N02R2G
Mouser Electronics MOSFET NFET 20V 0.035R TR RoHS: Compliant 543
  • 1 $0.8500
  • 10 $0.7360
  • 100 $0.5100
  • 500 $0.4260
  • 1,000 $0.3630
  • 2,500 $0.3220
  • 5,000 $0.3050
  • 10,000 $0.2830
  • 25,000 $0.2800
$0.2800 / $0.8500 Buy Now
Future Electronics Dual N-Channel 20 V 35 mOhm 2 W Surface Mount Power MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3000
  • 5,000 $0.2900
  • 7,500 $0.2900
  • 10,000 $0.2850
  • 12,500 $0.2800
$0.2800 / $0.3000 Buy Now
Bristol Electronics   226
RFQ
DISTI # NTMD6N02R2G
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3320
  • 5,000 $0.3230
  • 10,000 $0.3140
  • 15,000 $0.3050
  • 20,000 $0.2961
  • 25,000 $0.2871
  • 250,000 $0.2781
$0.2781 / $0.3320 Buy Now
DISTI # NTMD6N02R2G
Avnet Americas Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3320
  • 5,000 $0.3230
  • 10,000 $0.3140
  • 15,000 $0.3050
  • 20,000 $0.2961
  • 25,000 $0.2871
  • 250,000 $0.2781
$0.2781 / $0.3320 Buy Now
DISTI # NTMD6N02R2G
Avnet Silica Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 6 Days Silica - 5000
Buy Now
DISTI # NTMD6N02R2G
EBV Elektronik Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R (Alt: NTMD6N02R2G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation NFET SO8D 20V 0.035R TR RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.4363
$0.4363 Buy Now
Win Source Electronics Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R / MOSFET 2N-CH 20V 3.92A 8SO 27000
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

Part Details for NTMD6N02R2G

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NTMD6N02R2G Part Data Attributes

Parametric Data
NTMD6N02R2G onsemi
Buy Now Datasheet
Compare Parts:
NTMD6N02R2G onsemi Dual N-Channel Enhancement Mode Power MOSFET 20V, 6.5A, 35mΩ, SOIC-8 Narrow Body, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOIC-8 Narrow Body
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code 751-07
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 27 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 360 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.92 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.73 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTMD6N02R2G

This table gives cross-reference parts and alternative options found for NTMD6N02R2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMD6N02R2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTMD6N02R2 3.92A, 20V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8 Rochester Electronics LLC NTMD6N02R2G vs NTMD6N02R2
NTMD6N02R2 Dual N-Channel Enhancement Mode Power MOSFET 20V, 6.5A, 35mΩ, SOIC-8 Narrow Body, 2500-REEL onsemi NTMD6N02R2G vs NTMD6N02R2
Part Number Description Manufacturer Compare
IRF7530 Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG NTMD6N02R2G vs IRF7530
IRF7530TRPBF Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier NTMD6N02R2G vs IRF7530TRPBF
IRF7530TR Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier NTMD6N02R2G vs IRF7530TR
NTMD6N02R2 Dual N-Channel Enhancement Mode Power MOSFET 20V, 6.5A, 35mΩ, SOIC-8 Narrow Body, 2500-REEL onsemi NTMD6N02R2G vs NTMD6N02R2
IRF7530 Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier NTMD6N02R2G vs IRF7530
IRF7530PBF Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 Infineon Technologies AG NTMD6N02R2G vs IRF7530PBF
IRF7530PBF Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier NTMD6N02R2G vs IRF7530PBF

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