There are no models available for this part yet.
Overview of NTMFS5C645NLT3G by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for NTMFS5C645NLT3G by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
31AC1056
|
Newark | T6 60V So8Fl/ Reel Rohs Compliant: Yes |Onsemi NTMFS5C645NLT3G RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | ||
DISTI #
NTMFS5C645NLT3G
|
Avnet Americas | T6 60V SO8FL - Tape and Reel (Alt: NTMFS5C645NLT3G) RoHS: Compliant Min Qty: 589 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 25000 Partner Stock |
|
$1.0540 / $1.2580 | Buy Now | |
DISTI #
NTMFS5C645NLT3G
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ | ||
DISTI #
NTMFS5C645NLT3G
|
EBV Elektronik | T6 60V SO8FL (Alt: NTMFS5C645NLT3G) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | ||
Flip Electronics | Stock, ship today | 25000 |
|
RFQ |
CAD Models for NTMFS5C645NLT3G by onsemi
Part Data Attributes for NTMFS5C645NLT3G by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ONSEMI
|
Manufacturer Package Code
|
488AA
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
2 Days
|
Samacsys Manufacturer
|
onsemi
|
Avalanche Energy Rating (Eas)
|
185 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
100 A
|
Drain-source On Resistance-Max
|
0.0057 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
17 pF
|
JESD-30 Code
|
R-PDSO-F5
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
5
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
79 W
|
Pulsed Drain Current-Max (IDM)
|
820 A
|
Surface Mount
|
YES
|
Terminal Finish
|
Matte Tin (Sn) - annealed
|
Terminal Form
|
FLAT
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Element Material
|
SILICON
|
Alternate Parts for NTMFS5C645NLT3G
This table gives cross-reference parts and alternative options found for NTMFS5C645NLT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMFS5C645NLT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTMFS5C645NLT1G | Single N−Channel Power MOSFET 60V, 100A, 4.0mΩ, 1500-REEL | onsemi | NTMFS5C645NLT3G vs NTMFS5C645NLT1G |
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