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Part Details for NTR4003NT3G by onsemi
Results Overview of NTR4003NT3G by onsemi
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
NTR4003NT3G Information
NTR4003NT3G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTR4003NT3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T5892
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Newark | Mosfet Transistor, N Channel, 560 Ma, 30 V, 1.5 Ohm, 4 V, 800 Mv Rohs Compliant: Yes |Onsemi NTR4003NT3G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk | 14444 |
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$0.0580 / $0.1970 | Buy Now |
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DISTI #
27M2767
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Newark | N Channel Mosfet, 30V, 560Ma Sot-23, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:560Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4V, Power Dissipation:830Mw Rohs Compliant: Yes |Onsemi NTR4003NT3G RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0540 / $0.0570 | Buy Now |
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DISTI #
09R9671
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Newark | N Channel Mosfet, 30V, 560Ma Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:560Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Onsemi NTR4003NT3G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.0570 / $0.1530 | Buy Now |
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DISTI #
38AH1519
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Newark | Nfet Sot23 30V .56A 1500M Rohs Compliant: Yes |Onsemi NTR4003NT3G RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0480 | Buy Now |
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DISTI #
NTR4003NT3G
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Avnet Americas | - Tape and Reel (Alt: NTR4003NT3G) COO: Czechia RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 17 Weeks, 0 Days Container: Reel | 20000 |
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$0.0220 / $0.0239 | Buy Now |
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Bristol Electronics | 30 |
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RFQ | ||
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Bristol Electronics | 20 |
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RFQ | ||
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Rochester Electronics | Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant Status: Active Min Qty: 1 | 6550 |
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$0.0334 / $0.0539 | Buy Now |
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DISTI #
NTR4003NT3G
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TME | Transistor: N-MOSFET, unipolar, 30V, 0.4A, 0.83W, SOT23 Min Qty: 10000 | 0 |
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$0.0366 / $0.0423 | RFQ |
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DISTI #
NTR4003NT3G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 20000 | 0 |
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$0.0400 | Buy Now |
Part Details for NTR4003NT3G
NTR4003NT3G CAD Models
NTR4003NT3G Part Data Attributes
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NTR4003NT3G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTR4003NT3G
onsemi
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 0.5 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.83 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
NTR4003NT3G Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.
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Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Also, consider using a heat sink or thermal interface material to improve heat dissipation.
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The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage below 5V to ensure reliable operation.
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Yes, the NTR4003NT3G is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI).
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Handle the device with ESD-protective equipment and follow proper ESD-handling procedures. Also, consider adding ESD-protection circuits or devices in the system design to prevent ESD damage.