Datasheets
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NTR4501NT1G by: onsemi

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Part Details for NTR4501NT1G by onsemi

Results Overview of NTR4501NT1G by onsemi

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NTR4501NT1G Information

NTR4501NT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTR4501NT1G

Part # Distributor Description Stock Price Buy
DISTI # 86AK5855
Newark Nfet Sot23 20V 3.2A 80Mo, Transistor Polarity:N Channel, Continuous Drain Current Id:3.2A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.08Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.2V, Power Dissipation Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Tape & Reel 6000
  • 3,000 $0.1170
  • 6,000 $0.1120
  • 12,000 $0.1070
  • 18,000 $0.1020
  • 30,000 $0.0960
$0.0960 / $0.1170 Buy Now
DISTI # 06R3476
Newark N Channel Mosfet, 20V, 3.2A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4105
  • 1 $0.0250
  • 25 $0.0250
  • 50 $0.0250
  • 100 $0.0250
  • 250 $0.0250
  • 500 $0.0250
$0.0250 Buy Now
DISTI # 45J2175
Newark N Channel Mosfet, 20V, 3.2A, Sot-23, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1.25W Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel 0
  • 6,000 $0.0910
  • 12,000 $0.0860
$0.0860 / $0.0910 Buy Now
DISTI # NTR4501NT1G
Avnet Americas - Tape and Reel (Alt: NTR4501NT1G) COO: China RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Tape & Reel 348000
  • 3,000 $0.0667
  • 6,000 $0.0664
  • 12,000 $0.0661
  • 24,000 $0.0657
  • 48,000 $0.0654
$0.0654 / $0.0667 Buy Now
DISTI # 06R3476
Avnet Americas - Product that comes on tape, but is not reeled (Alt: 06R3476) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 4914 Partner Stock
RFQ
DISTI # NTR4501NT1G
Avnet Americas - Tape and Reel (Alt: NTR4501NT1G) COO: China RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Tape & Reel 0
  • 15,000 $0.0667
  • 30,000 $0.0664
  • 60,000 $0.0661
  • 120,000 $0.0657
  • 240,000 $0.0654
$0.0654 / $0.0667 Buy Now
Bristol Electronics   Min Qty: 14 9045
  • 14 $0.3750
  • 41 $0.1875
  • 268 $0.1125
  • 1,335 $0.0750
  • 4,668 $0.0562
$0.0562 / $0.3750 Buy Now
Bristol Electronics   5200
RFQ
Bristol Electronics   2000
RFQ
Bristol Electronics   10
RFQ
Rochester Electronics Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant Status: Active Min Qty: 1 2000
  • 100 $0.0844
  • 500 $0.0760
  • 1,000 $0.0701
  • 10,000 $0.0625
  • 100,000 $0.0523
$0.0523 / $0.0844 Buy Now
DISTI # NTR4501NT1G
TME Transistor: N-MOSFET, unipolar, 20V, 2.4A, Idm: 10A, 1.25W, SOT23 Min Qty: 1 8081
  • 1 $0.2100
  • 10 $0.1490
  • 50 $0.1112
  • 100 $0.0983
  • 500 $0.0749
  • 1,000 $0.0679
  • 1,500 $0.0632
  • 3,000 $0.0585
  • 6,000 $0.0562
$0.0562 / $0.2100 Buy Now
DISTI # NTR4501NT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # NTR4501NT1G
Avnet Asia (Alt: NTR4501NT1G) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 30 Weeks, 0 Days 0
RFQ
DISTI # NTR4501NT1G
Avnet Silica (Alt: NTR4501NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Silica - 1809000
Buy Now
Chip Stock PowerMOSFET,NChannel,20V,3.2A,80Milliohms,SOT-23(TO-236),3Pins,SurfaceMount 248760
RFQ
DISTI # NTR4501NT1G
EBV Elektronik (Alt: NTR4501NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days EBV - 3000
Buy Now
Flip Electronics Stock, Ship Today 15000
RFQ
LCSC 20V 3.2A 1.25W 88m2.5V3.1A One N-channel SOT-23 Single FETs MOSFETs RoHS 5945
  • 5 $0.0891
  • 50 $0.0696
  • 150 $0.0599
  • 500 $0.0526
  • 3,000 $0.0467
  • 6,000 $0.0438
$0.0438 / $0.0891 Buy Now
LCSC 20V 3.2A 1.25W 80m4.5V One N-channel SOT-23 Single FETs MOSFETs RoHS 2
  • 2 $0.0942
  • 20 $0.0921
  • 60 $0.0908
  • 200 $0.0894
$0.0894 / $0.0942 Buy Now
New Advantage Corporation N-Channel 20 V 80 mOhm 1.25 W Surface Mount Power MOSFET - SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.2150
$0.2150 Buy Now
Win Source Electronics MOSFET N-CH 20V 3.2A SOT-23 / Trans MOSFET N-CH 20V 3.2A 3-Pin SOT-23 T/R 236260
  • 930 $0.0538
  • 1,985 $0.0504
  • 3,090 $0.0486
  • 4,425 $0.0452
  • 5,765 $0.0434
  • 7,195 $0.0417
$0.0417 / $0.0538 Buy Now

Part Details for NTR4501NT1G

NTR4501NT1G CAD Models

NTR4501NT1G Part Data Attributes

NTR4501NT1G onsemi
Buy Now Datasheet
Compare Parts:
NTR4501NT1G onsemi Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description Sot-23, 3 Pin
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code Compliant
ECCN Code EAR99
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 50 Pf
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon
Turn-off Time-Max (toff) 30 Ns
Turn-on Time-Max (ton) 37 Ns
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NTR4501NT1G Related Parts

NTR4501NT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.

  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.

  • Yes, the NTR4501NT1G can be used in high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).

  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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