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Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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NTR4501NT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86AK5855
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Newark | Nfet Sot23 20V 3.2A 80Mo, Transistor Polarity:N Channel, Continuous Drain Current Id:3.2A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.08Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.2V, Power Dissipation Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Tape & Reel | 6000 |
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$0.0960 / $0.1170 | Buy Now |
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DISTI #
06R3476
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Newark | N Channel Mosfet, 20V, 3.2A, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4105 |
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$0.0250 | Buy Now |
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DISTI #
45J2175
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Newark | N Channel Mosfet, 20V, 3.2A, Sot-23, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1.25W Rohs Compliant: Yes |Onsemi NTR4501NT1G RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 0 |
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$0.0860 / $0.0910 | Buy Now |
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DISTI #
NTR4501NT1G
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Avnet Americas | - Tape and Reel (Alt: NTR4501NT1G) COO: China RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Tape & Reel | 348000 |
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$0.0654 / $0.0667 | Buy Now |
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DISTI #
06R3476
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 06R3476) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 4914 Partner Stock |
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RFQ | |
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DISTI #
NTR4501NT1G
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Avnet Americas | - Tape and Reel (Alt: NTR4501NT1G) COO: China RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Tape & Reel | 0 |
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$0.0654 / $0.0667 | Buy Now |
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Bristol Electronics | Min Qty: 14 | 9045 |
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$0.0562 / $0.3750 | Buy Now |
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Bristol Electronics | 5200 |
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RFQ | ||
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Bristol Electronics | 2000 |
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RFQ | ||
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Bristol Electronics | 10 |
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RFQ |
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NTR4501NT1G
onsemi
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Datasheet
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Compare Parts:
NTR4501NT1G
onsemi
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SOT-23 (TO-236) 3 LEAD | |
| Package Description | Sot-23, 3 Pin | |
| Pin Count | 3 | |
| Manufacturer Package Code | 318 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 50 Pf | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 30 Ns | |
| Turn-on Time-Max (ton) | 37 Ns |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.
Yes, the NTR4501NT1G can be used in high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI).
Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.