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Part Details for NTTFS5116PLTAG by onsemi
Results Overview of NTTFS5116PLTAG by onsemi
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTTFS5116PLTAG Information
NTTFS5116PLTAG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTTFS5116PLTAG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH1523
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Newark | Pfet U8Fl 60V 5.4A 52Mohm Rohs Compliant: Yes |Onsemi NTTFS5116PLTAG RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Tape & Reel | 3000 |
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$0.4560 / $0.4880 | Buy Now |
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DISTI #
81Y7059
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Newark | Mosfet, P-Ch, 60V, 5.7A, 175Deg C, 3.2W, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi NTTFS5116PLTAG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 141 |
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$0.3570 | Buy Now |
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DISTI #
85AC2112
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Newark | Mosfet, P-Ch, -60V, -5.7A, Wdfn-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-5.7A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.037Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Onsemi NTTFS5116PLTAG RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 1 Container: Tape & Reel | 0 |
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$0.4720 / $0.5080 | Buy Now |
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DISTI #
NTTFS5116PLTAG
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Avnet Americas | - Tape and Reel (Alt: NTTFS5116PLTAG) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days Container: Tape & Reel | 3000 |
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$0.3296 / $0.3516 | Buy Now |
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DISTI #
81Y7059
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 81Y7059) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 141 Partner Stock |
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$0.4680 / $1.1800 | Buy Now |
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DISTI #
70341424
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RS | P-CHANNEL MOSFET TRANSISTOR 20 A 60 V 8-PIN WDFN Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.9100 / $1.0800 | RFQ |
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DISTI #
NTTFS5116PLTAG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$0.3300 | Buy Now |
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Chip 1 Exchange | INSTOCK | 68250 |
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RFQ | |
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DISTI #
NTTFS5116PLTAG
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Avnet Asia | (Alt: NTTFS5116PLTAG) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
NTTFS5116PLTAG
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Avnet Silica | (Alt: NTTFS5116PLTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 24 Weeks, 0 Days | Silica - 396000 |
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Buy Now |
Part Details for NTTFS5116PLTAG
NTTFS5116PLTAG CAD Models
NTTFS5116PLTAG Part Data Attributes
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NTTFS5116PLTAG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTTFS5116PLTAG
onsemi
Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | WDFN8 3.3x3.3, 0.65P | |
| Package Description | Wdfn8, 8 Pin | |
| Pin Count | 8 | |
| Manufacturer Package Code | 511AB | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 45 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 84 Pf | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Square | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-Channel | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for NTTFS5116PLTAG
This table gives cross-reference parts and alternative options found for NTTFS5116PLTAG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTTFS5116PLTAG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTTFS5116PLTWG | onsemi | $0.4718 | Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL | NTTFS5116PLTAG vs NTTFS5116PLTWG |
| NVTFS5116PLTWG | onsemi | $0.6512 | Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL, Automotive Qualified | NTTFS5116PLTAG vs NVTFS5116PLTWG |
NTTFS5116PLTAG Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
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Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Implement EMI filters and shielding on the PCB if necessary.
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Use a low-ESR capacitor for decoupling, minimize PCB trace lengths and inductance, and ensure a solid ground plane. Implement a pi-filter or other EMI filtering techniques if necessary.
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Use a 4-wire Kelvin connection for accurate voltage and current measurements. Ensure the test setup is properly calibrated and isolated from noise sources. Consult the datasheet for specific test conditions and procedures.