Datasheets
NVB5404NT4G by: onsemi

Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK. Power MOSFET 40V 167A 4.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified

Part Details for NVB5404NT4G by onsemi

Overview of NVB5404NT4G by onsemi

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Price & Stock for NVB5404NT4G

Part # Distributor Description Stock Price Buy
DISTI # 74AK1293
Newark Nvb5404Nt4G, Single Mosfets |Onsemi NVB5404NT4G RoHS: Not Compliant Min Qty: 260 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.9700
  • 500 $1.8200
  • 1,000 $1.6300
  • 2,500 $1.3200
  • 5,000 $1.2800
$1.2800 / $1.9700 Buy Now
DISTI # NVB5404NT4GOSCT-ND
DigiKey MOSFET N-CH 40V 24A D2PAK Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Digi-Reel® 796
In Stock
  • 1 $3.7300
  • 10 $2.4400
  • 100 $1.7076
$1.7076 / $3.7300 Buy Now
DISTI # NVB5404NT4G
Avnet Americas Trans MOSFET N-CH 40V 24A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NVB5404NT4G) RoHS: Compliant Min Qty: 257 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 492 Partner Stock
  • 257 $1.4431
  • 260 $1.4041
  • 520 $1.3651
  • 1,300 $1.3261
  • 2,600 $1.2871
  • 13,000 $1.2481
  • 26,000 $1.2091
$1.2091 / $1.4431 Buy Now
Rochester Electronics NVB5404N - Power Field-Effect Transistor, 24A, 40V, 0.0045ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 492
  • 1 $1.4200
  • 25 $1.3900
  • 100 $1.3400
  • 500 $1.2800
  • 1,000 $1.2100
$1.2100 / $1.4200 Buy Now

Part Details for NVB5404NT4G

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NVB5404NT4G Part Data Attributes

NVB5404NT4G onsemi
Buy Now Datasheet
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NVB5404NT4G onsemi Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK. Power MOSFET 40V 167A 4.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3/2
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 254 W
Pulsed Drain Current-Max (IDM) 670 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NVB5404NT4G

This table gives cross-reference parts and alternative options found for NVB5404NT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVB5404NT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RS1G260MNTB Power Field-Effect Transistor, 26A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 ROHM Semiconductor NVB5404NT4G vs RS1G260MNTB

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