| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
62AC7367
|
Newark | Mosfet, Aec-Q101, N-Ch, 40V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:43A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0071Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi NVD5C478NT4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2411 |
|
$0.7490 / $1.4000 | Buy Now | |
|
DISTI #
NVD5C478NT4GOSCT-ND
|
DigiKey | MOSFET N-CH 40V 14A/43A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
930 In Stock |
|
$0.6913 / $2.4600 | Buy Now | |
|
DISTI #
NVD5C478NT4G
|
Avnet Americas | Transistor MOSFET N-CH 40V 43A 3-Pin TO-252 T/R - Tape and Reel (Alt: NVD5C478NT4G) RoHS: Compliant Min Qty: 1220 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 5353 Partner Stock |
|
$0.5084 / $0.6068 | Buy Now | |
|
DISTI #
66986581
|
Verical | Trans MOSFET N-CH 40V 14A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 9 Package Multiple: 1 Date Code: 2246 | Americas - 1900 |
|
$0.5855 / $0.7449 | Buy Now | |
|
DISTI #
NVD5C478NT4G
|
Avnet Silica | Transistor MOSFET N-CH 40V 43A 3-Pin TO-252 T/R (Alt: NVD5C478NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
|
DISTI #
C1S541901843692
|
Chip1Stop | MOSFET RoHS: Compliant | 1900 |
|
$0.6750 / $1.0600 | Buy Now | |
|
DISTI #
NVD5C478NT4G
|
EBV Elektronik | Transistor MOSFET N-CH 40V 43A 3-Pin TO-252 T/R (Alt: NVD5C478NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | ||
| Flip Electronics | Stock, ship today | 5353 |
|
RFQ | |||
| LCSC | 40V 8.4m15A10V 4V30uA 1 N-Channel DPAK-3 MOSFETs ROHS | 10 |
|
$1.1088 / $1.1716 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Manufacturer Package Code
|
369C
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
2 Days
|
|
Samacsys Manufacturer
|
onsemi
|
|
Avalanche Energy Rating (Eas)
|
97 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
40 V
|
|
Drain Current-Max (ID)
|
43 A
|
|
Drain-source On Resistance-Max
|
0.0084 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
24 pF
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
30 W
|
|
Pulsed Drain Current-Max (IDM)
|
210 A
|
|
Reference Standard
|
AEC-Q101
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn) - annealed
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Element Material
|
SILICON
|
