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NVHL080N120SC1 by: onsemi

Overview of: NVHL080N120SC1 by onsemi

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Price & Stock for: NVHL080N120SC1

Distributor Stock Package QTY Break / Prices
View this part on Digi-Key
0 Tube
  • 1 $18.7900
  • 10 $17.2690
  • 100 $14.5846
  • 500 $12.9740
  • 1,000 $11.9003
View this part on Avnet Americas
0 Tube
  • 450 $12.2013
  • 900 $11.8759
  • 1,800 $11.5506
  • 2,700 $11.2252
  • 3,600 $10.8998
View this part on Newark
21 Bulk
  • 1 $18.7900
  • 10 $17.2600
  • 25 $16.5400
  • 50 $15.5600
  • 100 $14.5800
View this part on Avnet Europe
0
  • 450 $29.4202
  • 900 $27.2883
  • 1,800 $23.0245
  • 2,700 $20.8926
  • 3,600 $18.9313
  • 4,500 $16.6288
  • 45,000 $15.6055
View this part on element14 Asia-Pacific
22 Each
  • 1 $15.6502
  • 10 $14.7852
  • 25 $14.4799
  • 100 $13.7893
View this part on Farnell
21 Each
  • 1 $21.0021
  • 5 $19.7446
  • 10 $18.4871
  • 50 $18.1123

Part Details for: NVHL080N120SC1

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Part Data Attributes

NVHL080N120SC1 onsemi

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NVHL080N120SC1 onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE

Source Content uid NVHL080N120SC1
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-12-03
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 44 A
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 348 W
Pulsed Drain Current-Max (IDM) 136 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 61 ns
Turn-on Time-Max (ton) 25 ns

Alternate Parts for: NVHL080N120SC1

Part Number Description Manufacturer Compare
MSC080SMA120S Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA Microchip Technology Inc NVHL080N120SC1 vs MSC080SMA120S
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor NVHL080N120SC1 vs S2301
MSC080SMA120B Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1 vs MSC080SMA120B
SCT2080KE Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor NVHL080N120SC1 vs SCT2080KE

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