Datasheets
NVHL080N120SC1 by: onsemi

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE

Part Details for: NVHL080N120SC1 by onsemi

Overview of: NVHL080N120SC1 by onsemi

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Price & Stock for: NVHL080N120SC1

Distributor Stock Package QTY Break / Prices
View NVHL080N120SC1 on Digi-Key
0 Tube
  • 1 $18.7900
  • 10 $17.2690
  • 100 $14.5846
  • 500 $12.9740
View NVHL080N120SC1 on Avnet Americas
0 Tube
  • 450 $12.2013
  • 900 $11.8759
  • 1,800 $11.5506
  • 2,700 $11.2252
  • 3,600 $10.8998
View NVHL080N120SC1 on Newark
0 Bulk
  • 1 $18.7900
  • 10 $17.2700
  • 25 $16.3700
  • 50 $15.4800
  • 100 $14.5800
  • 250 $13.7800
  • 500 $12.9700
View NVHL080N120SC1 on Avnet Europe
0
  • 30 $30.7140
  • 60 $28.4884
  • 120 $24.0371
  • 180 $21.8114
  • 240 $19.7638
  • 300 $17.3601
  • 3,000 $16.2918
View NVHL080N120SC1 on element14 Asia-Pacific
1 Each
  • 1 $22.8121
  • 10 $20.9536
  • 25 $20.0853
  • 100 $17.7013
View NVHL080N120SC1 on Farnell
0 Each
  • 1 $21.5379
  • 5 $20.2484
  • 10 $18.9588
  • 50 $18.5745

Part Details for: NVHL080N120SC1

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Part Data Attributes

NVHL080N120SC1 onsemi

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NVHL080N120SC1 onsemi Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE

Source Content uid NVHL080N120SC1
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-12-03
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 44 A
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 348 W
Pulsed Drain Current-Max (IDM) 136 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 61 ns
Turn-on Time-Max (ton) 25 ns

Alternate Parts for: NVHL080N120SC1

This table gives cross-reference parts and alternative options found for NVHL080N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NVHL080N120SC1A Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE onsemi NVHL080N120SC1 vs NVHL080N120SC1A
Part Number Description Manufacturer Compare
SCT2080KEHRC11 Transistors Power Field-Effect Transistor, ROHM Semiconductor NVHL080N120SC1 vs SCT2080KEHRC11
SCH2080KE Transistors Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor NVHL080N120SC1 vs SCH2080KE
SCT2080KE Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor NVHL080N120SC1 vs SCT2080KE
MSC080SMA120B4 Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1 vs MSC080SMA120B4
NVHL080N120SC1A Transistors Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE onsemi NVHL080N120SC1 vs NVHL080N120SC1A
S2301 Transistors Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor NVHL080N120SC1 vs S2301
MSC080SMA120B Transistors Power Field-Effect Transistor, Microsemi Corporation NVHL080N120SC1 vs MSC080SMA120B

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