-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Distributor | Stock | Package | QTY Break / Prices |
---|---|---|---|
|
0 Tube |
Tube |
|
|
0 | Tube |
|
|
0 | Bulk |
|
|
1 | Each |
|
|
0 | Each |
|
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
NVHL080N120SC1
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVHL080N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified
|
Source Content uid | NVHL080N120SC1 | |
Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Manufacturer Package Code | 340CX | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-12-03 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 171 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (Abs) (ID) | 44 A | |
Drain Current-Max (ID) | 44 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 348 W | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE | |
Turn-off Time-Max (toff) | 61 ns | |
Turn-on Time-Max (ton) | 25 ns |
This table gives cross-reference parts and alternative options found for NVHL080N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTHL080N120SC1 Transistors | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | NVHL080N120SC1 vs NTHL080N120SC1 |
NTHL080N120SC1A Transistors | Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE | onsemi | NVHL080N120SC1 vs NTHL080N120SC1A |