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Part Details for NVHL080N120SC1 by onsemi
Overview of NVHL080N120SC1 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for NVHL080N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
99AC9420
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Newark | Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant: Yes |Onsemi NVHL080N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2242 |
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$26.1600 / $34.9100 | Buy Now |
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DISTI #
NVHL080N120SC1OS-ND
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DigiKey | SICFET N-CH 1200V 44A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
375 In Stock |
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$10.3134 / $14.9400 | Buy Now |
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DISTI #
NVHL080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube | 493 Factory Stock |
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$8.7325 / $10.4226 | Buy Now |
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DISTI #
NVHL080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 44 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 493 Partner Stock |
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$14.2104 / $16.9608 | Buy Now |
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DISTI #
863-NVHL080N120SC1
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Mouser Electronics | MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A RoHS: Compliant | 450 |
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$20.5900 / $29.7900 | Buy Now |
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Future Electronics | N-Channel 1200 V 31 A 110 mohm Through Hole MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 450Tube |
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$10.1200 | Buy Now |
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Future Electronics | N-Channel 1200 V 31 A 110 mohm Through Hole MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$10.1200 | Buy Now |
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Future Electronics | N-Channel 1200 V 31 A 110 mohm Through Hole MOSFET - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
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$10.1200 / $10.3600 | Buy Now |
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DISTI #
NVHL080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 44 Package Multiple: 1 Lead time: 0 Weeks, 2 Days | 493 Partner Stock |
|
$14.2104 / $16.9608 | Buy Now |
|
DISTI #
NVHL080N120SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 27 Weeks, 0 Days Container: Tube | 27900 Factory Stock |
|
$20.4808 / $22.9263 | Buy Now |
Part Details for NVHL080N120SC1
NVHL080N120SC1 CAD Models
NVHL080N120SC1 Part Data Attributes
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NVHL080N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NVHL080N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2018-12-03 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 348 W | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 61 ns | |
| Turn-on Time-Max (ton) | 25 ns |
Alternate Parts for NVHL080N120SC1
This table gives cross-reference parts and alternative options found for NVHL080N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVHL080N120SC1A | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified | onsemi | NVHL080N120SC1 vs NVHL080N120SC1A |
| NTHL080N120SC1 | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | NVHL080N120SC1 vs NTHL080N120SC1 |
| NTHL080N120SC1A | Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE | onsemi | NVHL080N120SC1 vs NTHL080N120SC1A |