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Part Details for NVMFS4C05NT1G by onsemi
Results Overview of NVMFS4C05NT1G by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS4C05NT1G Information
NVMFS4C05NT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS4C05NT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47X2326
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Newark | Nfet So8Fl 30V 116A 3.4Mo Rohs Compliant: Yes |Onsemi NVMFS4C05NT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.0900 / $1.3600 | Buy Now |
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DISTI #
NVMFS4C05NT1G
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Avnet Americas | - Tape and Reel (Alt: NVMFS4C05NT1G) COO: United States of America (the) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$0.7535 / $0.8611 | Buy Now |
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Bristol Electronics | 11000 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 116A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant Status: Not Recommended for New Designs Min Qty: 1 | 3000 |
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$0.6324 / $1.0200 | Buy Now |
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DISTI #
NVMFS4C05NT1G
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TME | Transistor: N-MOSFET, unipolar, 30V, 127A, Idm: 174A, 79W, DFN5 Min Qty: 1 | 0 |
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$1.0900 / $1.7700 | RFQ |
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DISTI #
NVMFS4C05NT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$0.7500 | Buy Now |
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DISTI #
NVMFS4C05NT1G
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Avnet Asia | (Alt: NVMFS4C05NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
NVMFS4C05NT1G
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Avnet Silica | (Alt: NVMFS4C05NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | PowerField-EffectTransistor,116AI(D),1-Element,N-Channel,Metal-oxideSemiconductorFET | 39000 |
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RFQ | |
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DISTI #
NVMFS4C05NT1G
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EBV Elektronik | (Alt: NVMFS4C05NT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | EBV - 3000 |
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Buy Now |
Part Details for NVMFS4C05NT1G
NVMFS4C05NT1G CAD Models
NVMFS4C05NT1G Part Data Attributes
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NVMFS4C05NT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS4C05NT1G
onsemi
Single N-Channel Logic Level Power MOSFET 30V, 127A, 2.8mΩ Power MOSFET 30V 116A 3.4 mOhm Single N-Channel SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN5 5X6, 1.27P (SO 8FL) | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 116 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 79 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for NVMFS4C05NT1G
This table gives cross-reference parts and alternative options found for NVMFS4C05NT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFS4C05NT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVMFS4C05NT3G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 30V, 127A, 2.8mΩ Power MOSFET 30V 116A 3.4 mOhm Single N-Channel SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL, Automotive Qualified | NVMFS4C05NT1G vs NVMFS4C05NT3G |
| NVMFS4C05NWFT3G | onsemi | Check for Price | Single N-Channel Logic Level Power MOSFET 30V, 127A, 2.8mΩ Power MOSFET 30V 116A 3.4 mOhm Single N-Channel SO-8FL, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL, Automotive Qualified | NVMFS4C05NT1G vs NVMFS4C05NWFT3G |
NVMFS4C05NT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NVMFS4C05NT1G is 2.7V to 3.6V.
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To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
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The NVMFS4C05NT1G supports up to 100,000 erase cycles.
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Page erase and program operations should be performed using the recommended algorithms and timing specifications outlined in the datasheet to ensure reliable operation.
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The recommended storage temperature range for NVMFS4C05NT1G is -40°C to 125°C.