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Transistors / Power Field-Effect Transistors / NVMFS5C442NLAFT1G
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NVMFS5C442NLAFT1G by: onsemi

Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel., SO-8FL / DFN-5, 1500-REEL, Automotive Qualified

Part Details for NVMFS5C442NLAFT1G by onsemi

Results Overview of NVMFS5C442NLAFT1G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

NVMFS5C442NLAFT1G Information

NVMFS5C442NLAFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVMFS5C442NLAFT1G

Part # Distributor Description Stock Price Buy
DISTI # 54AH9530
Newark Mosfet, N-Ch, 40V, 130A, 175Deg C, 83W Rohs Compliant: Yes |Onsemi NVMFS5C442NLAFT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 325
  • 1 $2.4600
  • 10 $1.8000
  • 25 $1.6700
  • 50 $1.5500
  • 100 $1.4200
  • 250 $1.3400
  • 500 $1.2600
  • 1,000 $1.0500
$1.0500 / $2.4600 Buy Now
DISTI # NVMFS5C442NLAFT1G
Avnet Americas - Tape and Reel (Alt: NVMFS5C442NLAFT1G) COO: Japan RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 19 Weeks, 0 Days Container: Reel 4500 Factory Stock
  • 1,500 $0.8229
  • 3,000 $0.7784
  • 6,000 $0.7579
  • 9,000 $0.7385
  • 12,000 $0.7200
$0.7200 / $0.8229 Buy Now
DISTI # NVMFS5C442NLAFT1G
TME Transistor: N-MOSFET, unipolar, 40V, 130A, Idm: 900A, 42W, DFN5 Min Qty: 1 0
  • 1 $2.0300
  • 10 $1.4100
  • 100 $1.0600
  • 250 $1.0100
$1.0100 / $2.0300 RFQ
DISTI # NVMFS5C442NLAFT
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 0
  • 1,500 $0.7200
$0.7200 Buy Now
Chip 1 Exchange INSTOCK 7540
RFQ
DISTI # NVMFS5C442NLAFT1G
Avnet Asia (Alt: NVMFS5C442NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 19 Weeks, 0 Days 0
RFQ
DISTI # NVMFS5C442NLAFT1G
Avnet Silica (Alt: NVMFS5C442NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVMFS5C442NLAFT1G
EBV Elektronik (Alt: NVMFS5C442NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 2m10V50A 1 N-Channel SO-8FL Single FETs MOSFETs RoHS 50
  • 1 $1.6701
  • 10 $1.4280
  • 30 $1.2764
  • 100 $1.1201
  • 500 $1.0496
  • 1,500 $1.0190
$1.0190 / $1.6701 Buy Now
Wuhan P&S 40V��130A��2.5m��,N-Channel Power MOSFET Min Qty: 1 5800
  • 1 $2.0100
  • 100 $1.2900
  • 500 $1.0600
  • 1,000 $0.9800
$0.9800 / $2.0100 Buy Now

Part Details for NVMFS5C442NLAFT1G

NVMFS5C442NLAFT1G CAD Models

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NVMFS5C442NLAFT1G Part Data Attributes

Parametric Data
NVMFS5C442NLAFT1G onsemi
Buy Now Datasheet
Compare Parts:
NVMFS5C442NLAFT1G onsemi Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel., SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SO-8FL / DFN-5
Manufacturer Package Code 488AA
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Date Of Intro 2017-04-03
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 265 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 37 pF
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 900 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for NVMFS5C442NLAFT1G

This table gives cross-reference parts and alternative options found for NVMFS5C442NLAFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFS5C442NLAFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NVMFS5C442NLT3G onsemi $1.4000 Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 5000 / Tape & Reel., SO-8FL / DFN-5, 5000-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NLT3G
NVMFS5C442NLWFAFT1G onsemi $1.8000 Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NLWFAFT1G
NVMFS5C442NWFT3G onsemi Check for Price Single N-Channel Power MOSFET 40V, 140A, 2.3mΩ Power MOSFET 40V, 140A, 2.3 mOhm, Single N-Channel, SO8-FL. 5000 / Tape & Reel. Pb-Free, Wettable Flanks, DFNW5 4.90x5.90x1.00, 1.27P, 5000-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NWFT3G
NVMFS5C442NT3G onsemi Check for Price Single N-Channel Power MOSFET 40V, 140A, 2.3mΩ Power MOSFET 40V, 140A, 2.3 mOhm, Single N-Channel, SO8-FL. 5000 / Tape & Reel., SO-8FL / DFN-5, 5000-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NT3G
NVMFS5C442NLT1G onsemi Check for Price Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel., SO-8FL / DFN-5, 1500-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NLT1G
NVMFS5C442NT1G onsemi Check for Price Single N-Channel Power MOSFET 40V, 140A, 2.3mΩ Power MOSFET 40V, 140A, 2.3 mOhm, Single N-Channel, .SO8-FL. 1500 / Tape & Reel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NT1G
NVMFS5C442NLWFT1G onsemi Check for Price Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified NVMFS5C442NLAFT1G vs NVMFS5C442NLWFT1G
equivalents icon

NVMFS5C442NLAFT1G Related Parts

NVMFS5C442NLAFT1G Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for NVMFS5C442NLAFT1G is 2.7V to 3.6V.

  • To ensure data integrity during power-down or power-up sequences, it is recommended to follow the power-down and power-up sequence guidelines provided in the datasheet, and to use a voltage supervisor or a power-on reset circuit to ensure that the device is properly initialized.

  • The NVMFS5C442NLAFT1G supports up to 100,000 erase cycles.

  • Page erase and program operations in NVMFS5C442NLAFT1G should be handled using the device's command set, which includes commands for page erase, program, and read operations. The device's datasheet provides detailed information on the command set and the protocol for executing these operations.

  • The typical programming time for NVMFS5C442NLAFT1G is around 2-3 ms per page, depending on the operating voltage and temperature.

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