-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for NVMFS5C646NLAFT1G by onsemi
Results Overview of NVMFS5C646NLAFT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS5C646NLAFT1G Information
NVMFS5C646NLAFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C646NLAFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
31AC1169
|
Newark | T6 60V S08Fl Rohs Compliant: Yes |Onsemi NVMFS5C646NLAFT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.9620 / $1.2300 | Buy Now |
|
DISTI #
NVMFS5C646NLAFT1G
|
Avnet Americas | - Tape and Reel (Alt: NVMFS5C646NLAFT1G) COO: Japan RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.9243 / $1.0563 | Buy Now |
|
DISTI #
NVMFS5C646NLAFT1G
|
TME | Transistor: N-MOSFET, unipolar, 60V, 93A, Idm: 750A, 40W, DFN5 Min Qty: 1 | 0 |
|
$1.3500 / $2.1700 | RFQ |
|
DISTI #
NVMFS5C646NLAFT
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
|
$0.9200 | Buy Now |
|
DISTI #
NVMFS5C646NLAFT1G
|
Avnet Asia | (Alt: NVMFS5C646NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
NVMFS5C646NLAFT1G
|
Avnet Silica | (Alt: NVMFS5C646NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
|
Chip Stock | SingleN-ChannelPowerMOSFET60V,93A,4.7mΩ1500/Tape&, Reel | 5969 |
|
RFQ | |
|
DISTI #
NVMFS5C646NLAFT1G
|
EBV Elektronik | (Alt: NVMFS5C646NLAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Flip Electronics | Stock, ship today | 135000 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET N-CH 60V 20A/93A 5DFN / N-Channel 60 V 20A (Ta), 93A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) | 4469 |
|
$2.1760 / $3.2640 | Buy Now |
Part Details for NVMFS5C646NLAFT1G
NVMFS5C646NLAFT1G CAD Models
NVMFS5C646NLAFT1G Part Data Attributes
|
|
NVMFS5C646NLAFT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVMFS5C646NLAFT1G
onsemi
Single N-Channel Power MOSFET 60V, 93A, 4.7mΩ 1500 / Tape & Reel, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | SO-8FL / DFN-5 | |
| Package Description | So-8fl, Dfn5, 6 Pin | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-23 | |
| Avalanche Energy Rating (Eas) | 185 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 93 A | |
| Drain-source On Resistance-Max | 0.0063 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 17 Pf | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 750 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | Silicon |
Alternate Parts for NVMFS5C646NLAFT1G
This table gives cross-reference parts and alternative options found for NVMFS5C646NLAFT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMFS5C646NLAFT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVMFS5C646NLWFT1G | onsemi | Check for Price | Single N-Channel Power MOSFET 60V, 93A, 4.7mΩ 1500 / Tape & Reel (Pb?Free, Wettable Flanks), DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified | NVMFS5C646NLAFT1G vs NVMFS5C646NLWFT1G |
| NVMFS5C646NLT1G | onsemi | Check for Price | Single N-Channel Power MOSFET 60V, 93A, 4.7mΩ 1500 / Tape & Reel, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL, Automotive Qualified | NVMFS5C646NLAFT1G vs NVMFS5C646NLT1G |
NVMFS5C646NLAFT1G Frequently Asked Questions (FAQ)
-
The recommended operating temperature range for NVMFS5C646NLAFT1G is -40°C to 125°C.
-
To ensure data integrity and prevent data corruption, use the built-in Error-Correcting Code (ECC) feature, implement a robust wear-leveling algorithm, and follow the recommended programming and erasing procedures.
-
The NVMFS5C646NLAFT1G supports up to 100,000 program/erase cycles.
-
Use the device's built-in page and block management features, such as automatic page and block allocation, to optimize memory usage and minimize wear.
-
The typical programming time for NVMFS5C646NLAFT1G is around 2-3 ms per page.