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SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins, 36-BTRAY
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NXH350N100H4Q2F2PG
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Avnet Americas | IGBT MODULE TRENCH FIELD STOP THREE LEVEL INVERTER 1000 V 303 A 592 W CHASSIS MOUNT 42-PIM/Q2PACK (93X47) - Trays (Alt: NXH350N100H4Q2F2PG) RoHS: Compliant Min Qty: 6 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tray | 8027 Partner Stock |
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$110.2360 / $131.5720 | Buy Now |
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Rochester Electronics | NXH350N100H4Q2 - SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins RoHS: Compliant Status: Obsolete Min Qty: 1 | 15 |
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$266.8600 / $313.9500 | Buy Now |
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Flip Electronics | Stock, ship today | 8027 |
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$88.9000 | RFQ |
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NXH350N100H4Q2F2PG
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH350N100H4Q2F2PG
onsemi
SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins, 36-BTRAY
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 180BH | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Date Of Intro | 2020-02-19 | |
Samacsys Manufacturer | onsemi | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 329 A | |
Collector-Emitter Voltage-Max | 1000 V | |
Configuration | 2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X42 | |
Number of Elements | 2 | |
Number of Terminals | 42 | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 592 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 572.5 ns | |
Turn-on Time-Nom (ton) | 114 ns | |
VCEsat-Max | 1.8 V |
This table gives cross-reference parts and alternative options found for NXH350N100H4Q2F2PG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NXH350N100H4Q2F2PG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NXH350N100H4Q2F2SG | SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Solder pins, 36-BTRAY | onsemi | NXH350N100H4Q2F2PG vs NXH350N100H4Q2F2SG |