Datasheets
PHD21N06LT,118 by:

N-channel TrenchMOS logic level FET DPAK 3-Pin

Part Details for PHD21N06LT,118 by NXP Semiconductors

Overview of PHD21N06LT,118 by NXP Semiconductors

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Part Details for PHD21N06LT,118

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PHD21N06LT,118 Part Data Attributes:

PHD21N06LT,118 NXP Semiconductors
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PHD21N06LT,118 NXP Semiconductors N-channel TrenchMOS logic level FET DPAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DPAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code SOT428
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 34 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHD21N06LT,118

This table gives cross-reference parts and alternative options found for PHD21N06LT,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD21N06LT,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHD21N06LT Power Field-Effect Transistor Nexperia PHD21N06LT,118 vs PHD21N06LT
PHD21N06LT,118 N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin Nexperia PHD21N06LT,118 vs PHD21N06LT,118
Part Number Description Manufacturer Compare
HUF76409D3 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC PHD21N06LT,118 vs HUF76409D3
BUK9575-55A TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors PHD21N06LT,118 vs BUK9575-55A
HUF76413D3S 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation PHD21N06LT,118 vs HUF76413D3S
FDD3860 Power Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Fairchild Semiconductor Corporation PHD21N06LT,118 vs FDD3860
MTD20N06HD 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC PHD21N06LT,118 vs MTD20N06HD
IRF9Z34STRRPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix PHD21N06LT,118 vs IRF9Z34STRRPBF
HUF76409D3 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation PHD21N06LT,118 vs HUF76409D3
AUIRF9Z34N Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier PHD21N06LT,118 vs AUIRF9Z34N
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC PHD21N06LT,118 vs RFD14N05_NL
HUFA76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation PHD21N06LT,118 vs HUFA76419D3S

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