Part Details for PHD34NQ10T,118 by NXP Semiconductors
Overview of PHD34NQ10T,118 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Security and Surveillance
Aerospace and Defense
Healthcare
Renewable Energy
Robotics and Drones
Part Details for PHD34NQ10T,118
PHD34NQ10T,118 CAD Models
PHD34NQ10T,118 Part Data Attributes
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PHD34NQ10T,118
NXP Semiconductors
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Datasheet
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PHD34NQ10T,118
NXP Semiconductors
N-channel TrenchMOS standard level FET DPAK 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | DPAK | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 136 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHD34NQ10T,118
This table gives cross-reference parts and alternative options found for PHD34NQ10T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD34NQ10T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934055807118 | Power Field-Effect Transistor | Nexperia | PHD34NQ10T,118 vs 934055807118 |
934055807118 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | PHD34NQ10T,118 vs 934055807118 |