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N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin
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PHD34NQ10T,118
Nexperia
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Datasheet
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PHD34NQ10T,118
Nexperia
N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin
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Part Life Cycle Code | Obsolete | |
Part Package Code | DPAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 136 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PHD34NQ10T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD34NQ10T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHD34NQ10T,118 | N-channel TrenchMOS standard level FET DPAK 3-Pin | NXP Semiconductors | PHD34NQ10T,118 vs PHD34NQ10T,118 |
934055807118 | Power Field-Effect Transistor | Nexperia | PHD34NQ10T,118 vs 934055807118 |
934055807118 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | PHD34NQ10T,118 vs 934055807118 |