Part Details for PHT6N06T,125 by Nexperia
Overview of PHT6N06T,125 by Nexperia
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Part Details for PHT6N06T,125
PHT6N06T,125 CAD Models
PHT6N06T,125 Part Data Attributes
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PHT6N06T,125
Nexperia
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Datasheet
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PHT6N06T,125
Nexperia
Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | SC-73, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ESD PROTECTED | |
Avalanche Energy Rating (Eas) | 15 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |