Part Details for PJQ2888_R1_00001 by PanJit Semiconductor
Overview of PJQ2888_R1_00001 by PanJit Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Electronic Manufacturing
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
CO-142BNCX200-001 | Amphenol Cables on Demand | Amphenol CO-142BNCX200-001 BNC Male to BNC Male (RG142) 50 Ohm Coaxial Cable Assembly (High-Temp Teflon RG142B/U) 1ft | |
FO-DUALSTLC00-001 | Amphenol Cables on Demand | Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m | |
CO-316SMAX200-001 | Amphenol Cables on Demand | Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft |
Price & Stock for PJQ2888_R1_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJQ2888_R1_00001
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Mouser Electronics | MOSFETs 20V P-Channel Enhancement Mode MOSFET with TVS Diode RoHS: Compliant | 0 |
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$0.2220 / $0.7600 | Order Now |
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NAC | 20V P-Channel Enhancement Mode MOSFET with TVS Diode RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 | 0 |
|
RFQ | |
DISTI #
PJQ2888_R1_00001
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Avnet Silica | (Alt: PJQ2888_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
Part Details for PJQ2888_R1_00001
PJQ2888_R1_00001 CAD Models
PJQ2888_R1_00001 Part Data Attributes
|
PJQ2888_R1_00001
PanJit Semiconductor
Buy Now
Datasheet
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Compare Parts:
PJQ2888_R1_00001
PanJit Semiconductor
Power Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Package Description | DFN2020, 8 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 0.325 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PJQ2888_R1_00001
This table gives cross-reference parts and alternative options found for PJQ2888_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PJQ2888_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7504TRPBF | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | PJQ2888_R1_00001 vs IRF7504TRPBF |
IRF7504TR | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | Infineon Technologies AG | PJQ2888_R1_00001 vs IRF7504TR |
IRF7504PBF | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8 | International Rectifier | PJQ2888_R1_00001 vs IRF7504PBF |
IRF7504 | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | PJQ2888_R1_00001 vs IRF7504 |
IRF7504TR | Power Field-Effect Transistor, 1.7A I(D), 20V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | PJQ2888_R1_00001 vs IRF7504TR |