Datasheets
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PMBFJ309 by:
NXP Semiconductors

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal

Part Details for PMBFJ309 by NXP Semiconductors

Results Overview of PMBFJ309 by NXP Semiconductors

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Applications Consumer Electronics Audio and Video Systems

PMBFJ309 Information

PMBFJ309 by NXP Semiconductors is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PMBFJ309

Part # Distributor Description Stock Price Buy
Chip Stock VhfBandSiN-channelRfSmallSignalJfetTO-236AB 18500
RFQ
Win Source Electronics N-channel silicon field-effect transistors 15000
  • 19 $2.7273
  • 45 $2.2378
  • 70 $2.1678
  • 96 $2.0979
  • 124 $2.0280
  • 165 $1.8182
$1.8182 / $2.7273 Buy Now

US Tariff Estimator: PMBFJ309 by NXP Semiconductors

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Part Details for PMBFJ309

PMBFJ309 CAD Models

PMBFJ309 Part Data Attributes

PMBFJ309 NXP Semiconductors
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PMBFJ309 NXP Semiconductors TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Part Package Code SOT-23
Package Description Plastic Package-3
Pin Count 3
Reach Compliance Code Compliant
ECCN Code EAR99
HTS Code 8541.21.00
Additional Feature Low Noise
Configuration Single
DS Breakdown Voltage-Min 25 V
FET Technology Junction
Feedback Cap-Max (Crss) 2.5 Pf
Highest Frequency Band Very High Frequency Band
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Depletion Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Tin
Terminal Form Gull Wing
Terminal Position Dual
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Amplifier
Transistor Element Material Silicon

Alternate Parts for PMBFJ309

This table gives cross-reference parts and alternative options found for PMBFJ309. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PMBFJ309, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PMBFJ309TRL YAGEO Corporation Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Silicon PMBFJ309 vs PMBFJ309TRL
PMBFJ309-TAPE-7 NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal PMBFJ309 vs PMBFJ309-TAPE-7
PMBFJ309TRL13 NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal PMBFJ309 vs PMBFJ309TRL13
SST309 Temic Semiconductors Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN PMBFJ309 vs SST309
PMBFJ309TRL13 YAGEO Corporation Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Silicon PMBFJ309 vs PMBFJ309TRL13
PMBFJ309TRL NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal PMBFJ309 vs PMBFJ309TRL
Part Number Manufacturer Composite Price Description Compare
MMBFJ310LT1G onsemi $0.0843 N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL PMBFJ309 vs MMBFJ310LT1G
MMBFU310LT1G onsemi $0.1976 N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL PMBFJ309 vs MMBFU310LT1G
PMBFJ309-T NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal PMBFJ309 vs PMBFJ309-T
MMBFJ310L Motorola Semiconductor Products Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB, CASE 318-07, 3 PIN PMBFJ309 vs MMBFJ310L
PMBFJ310TRL NXP Semiconductors Check for Price VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET PMBFJ309 vs PMBFJ310TRL
U309 Solitron Devices Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-52, TO-52, 3 PIN PMBFJ309 vs U309
2SK210-BLTE85L Toshiba America Electronic Components Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal PMBFJ309 vs 2SK210-BLTE85L
PMBFJ308TRL13 NXP Semiconductors Check for Price TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal PMBFJ309 vs PMBFJ308TRL13
MMBFJ309LT1 onsemi Check for Price N-Channel JFET Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL PMBFJ309 vs MMBFJ309LT1
SST308 Temic Semiconductors Check for Price RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN PMBFJ309 vs SST308
equivalents icon

PMBFJ309 Related Parts

PMBFJ309 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN11535, which includes guidelines for component placement, trace routing, and grounding to minimize EMI.

  • The PMBFJ309 requires a bias voltage of 5V to 15V, and the recommended bias current is 10mA to 20mA. Ensure the bias voltage is stable and noise-free, and use a suitable bias resistor to limit the current.

  • The PMBFJ309 is rated for operation from -40°C to +125°C, but the maximum junction temperature (Tj) should not exceed 150°C. Ensure proper thermal management to prevent overheating.

  • Yes, the PMBFJ309 is suitable for switching power supply applications due to its high switching frequency capability (up to 100 kHz) and low RDS(on) (typically 1.5 ohms). However, ensure proper design and layout to minimize switching losses and EMI.

  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a voltage regulator and current sense resistor, to prevent damage to the PMBFJ309. Also, ensure the device is properly derated for the application.

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