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N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN004-60B,118 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
3440086
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Farnell | MOSFET, N-CH, 60V, 75A, TO-263 COO: CN RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 2 Days Container: Cut Tape | 119 |
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$2.3227 / $5.4899 | Buy Now |
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DISTI #
3440086RL
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Farnell | MOSFET, N-CH, 60V, 75A, TO-263 COO: CN RoHS: Compliant Min Qty: 100 Lead time: 53 Weeks, 2 Days Container: Reel | 119 |
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$2.3227 | Buy Now |
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DISTI #
PSMN004-60B,118
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Avnet Americas | Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN004-60B,118) COO: Philippines (the) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Container: Reel | 0 |
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$1.6800 / $1.7150 | Buy Now |
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DISTI #
PSMN004-60B.118
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TME | Transistor: N-MOSFET, unipolar, 60V, 75A, 230W, D2PAK,SOT404 Min Qty: 1 | 714 |
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$4.3900 / $5.5300 | Buy Now |
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DISTI #
PSMN004-60B,118
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 360 |
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$1.9100 | Buy Now |
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Chip Stock | TransistorMOSFETN-CH60V75A3-Pin(2+Tab)D2PAKT/R | 106000 |
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RFQ |
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PSMN004-60B,118
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN004-60B,118
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET@en-us D2PAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK | |
| Package Description | Plastic, D2pak-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Logic Level Compatible | |
| Avalanche Energy Rating (Eas) | 500 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0036 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for PSMN004-60B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN004-60B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN004-60B,118 | NXP Semiconductors | Check for Price | N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin | PSMN004-60B,118 vs PSMN004-60B,118 |
| 934057041118 | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | PSMN004-60B,118 vs 934057041118 |
| 934057041118 | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN004-60B,118 vs 934057041118 |
| PSMN004-60B | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | PSMN004-60B,118 vs PSMN004-60B |
The recommended PCB footprint for PSMN004-60B,118 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure the device operates within the safe operating area (SOA), monitor the device's voltage, current, and power dissipation. Ensure the device is operated within the recommended voltage range (Vds) and current range (Ids) specified in the datasheet.
The thermal resistance of PSMN004-60B,118 is Rth(j-a) = 2.5 K/W. This value indicates how efficiently the device can dissipate heat. A lower thermal resistance means better heat dissipation. In the design, ensure proper heat sinking and thermal management to prevent overheating.
Yes, PSMN004-60B,118 is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specifications.
To protect PSMN004-60B,118 from electrostatic discharge (ESD), handle the device with anti-static materials, use an ESD wrist strap or mat, and ensure the device is stored in an anti-static package. During assembly, use ESD-safe tools and follow proper ESD handling procedures.