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Transistors / Power Field-Effect Transistors / PSMN015-100YLX
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PSMN015-100YLX by: Nexperia

PSMN015-100YL - N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin

Part Details for PSMN015-100YLX by Nexperia

Overview of PSMN015-100YLX by Nexperia

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Price & Stock for PSMN015-100YLX

Part # Distributor Description Stock Price Buy
DISTI # 96Y9583
Newark Mosfet, N-Ch, 100V, 69A, Sot-669-4, Transistor Polarity:N Channel, Continuous Drain Current Id:69A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0116Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Nexperia PSMN015-100YLX RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 251
  • 1 $0.7280
$0.7280 Buy Now
DISTI # 1727-2591-1-ND
DigiKey MOSFET N-CH 100V 69A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2591
In Stock
  • 1 $2.0200
  • 10 $1.2890
  • 100 $0.8713
  • 500 $0.6922
  • 1,500 $0.5969
  • 3,000 $0.5612
  • 4,500 $0.5389
  • 7,500 $0.5344
$0.5344 / $2.0200 Buy Now
DISTI # PSMN015-100YLX
Avnet Americas Trans MOSFET N-CH 100V 69A 4-Pin LFPAK-56 T/R - Tape and Reel (Alt: PSMN015-100YLX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.4281
  • 9,000 $0.4281
  • 12,000 $0.4281
  • 15,000 $0.4281
  • 150,000 $0.4281
  • 375,000 $0.4281
  • 750,000 $0.4281
  • 1,500,000 $0.4281
$0.4281 Buy Now
DISTI # 771-PSMN015-100YLX
Mouser Electronics MOSFETs PSMN015-100YL/SOT669/LFPAK RoHS: Compliant 14380
  • 1 $1.0900
  • 10 $0.9550
  • 100 $0.7850
  • 500 $0.6490
  • 1,000 $0.5290
  • 1,500 $0.5290
  • 3,000 $0.5270
$0.5270 / $1.0900 Buy Now
Future Electronics N-Channel 100 V 69 A 14.7 mOhm 195 mW SMT Logic Level Mosfet - LFPAK56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks 0
  • 1,500 $0.4850
$0.4850 Buy Now
DISTI # PSMN015-100YLX
TTI MOSFETs PSMN015-100YL/SOT669/LFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1500 Package Multiple: 1500 Container: Reel Americas - 0
  • 1,500 $0.5210
  • 3,000 $0.5070
$0.5070 / $0.5210 Buy Now
DISTI # PSMN015-100YLX
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $0.9930
  • 10 $0.8930
  • 100 $0.7900
  • 500 $0.7090
  • 1,500 $0.6660
  • 3,000 $0.6190
  • 6,000 $0.5960
$0.5960 / $0.9930 RFQ
DISTI # PSMN015-100YLX
Avnet Asia Trans MOSFET N-CH 100V 69A 4-Pin LFPAK-56 T/R (Alt: PSMN015-100YLX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 1,500 $0.4845
  • 3,000 $0.4782
  • 4,500 $0.4721
  • 7,500 $0.4661
  • 15,000 $0.4546
  • 37,500 $0.4436
  • 75,000 $0.4332
$0.4332 / $0.4845 Buy Now
DISTI # PSMN015-100YLX
Avnet Silica Trans MOSFET N-CH 100V 69A 4-Pin LFPAK-56 T/R (Alt: PSMN015-100YLX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S548200851485
Chip1Stop MOSFET 1500
  • 1,500 $0.5290
$0.5290 Buy Now
DISTI # PSMN015-100YLX
EBV Elektronik Trans MOSFET N-CH 100V 69A 4-Pin LFPAK-56 T/R (Alt: PSMN015-100YLX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 69A 14.7m20A10V 195W 2.1V1mA 1 N-Channel SOT-669 MOSFETs ROHS 50
  • 1 $0.9306
  • 10 $0.9095
  • 30 $0.8958
  • 100 $0.8807
$0.8807 / $0.9306 Buy Now

Part Details for PSMN015-100YLX

PSMN015-100YLX Part Data Attributes

Parametric Data
PSMN015-100YLX Nexperia
Buy Now Datasheet
Compare Parts:
PSMN015-100YLX Nexperia PSMN015-100YL - N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SOP-8, 4 PIN
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 69 A
Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 274 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN015-100YLX

This table gives cross-reference parts and alternative options found for PSMN015-100YLX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN015-100YLX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN015-100YL Power Field-Effect Transistor Nexperia PSMN015-100YLX vs PSMN015-100YL
Part Number Description Manufacturer Compare
NVB6411ANT4G Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK. Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK., D2PAK 2 LEAD, 800-REEL, Automotive Qualified onsemi PSMN015-100YLX vs NVB6411ANT4G
SHD239602 Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN Sensitron Semiconductors PSMN015-100YLX vs SHD239602
SML10S75XX Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 TT Electronics Resistors PSMN015-100YLX vs SML10S75XX
IRFB4610TRL Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier PSMN015-100YLX vs IRFB4610TRL
IRFSL4610TRRPBF Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG PSMN015-100YLX vs IRFSL4610TRRPBF
IRFS4610 Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Infineon Technologies AG PSMN015-100YLX vs IRFS4610
IRFS4610TRR Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier PSMN015-100YLX vs IRFS4610TRR
APT10M19SVFRG Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc PSMN015-100YLX vs APT10M19SVFRG
HUF75645P3 N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-TUBE onsemi PSMN015-100YLX vs HUF75645P3
IRFB4610TRLPBF Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG PSMN015-100YLX vs IRFB4610TRLPBF

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