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Transistors Power Field-Effect Transistors PSMN016-100YS,115

Transistors
PSMN016-100YS,115
Description: PSMN016-100YS - N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK@en-us SOIC 4-Pin

Overview of PSMN016-100YS,115 by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 11 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for PSMN016-100YS,115 by Nexperia

Part # Manufacturer Description Stock Price Buy
DISTI # 13T9523
Newark Mosfet, n Channel,100V,51A, lfpak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:51A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN016-100YS,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1544
  • 1 $0.3630
  • 10 $0.3630
  • 25 $0.3630
  • 50 $0.3630
  • 100 $0.3630
  • 250 $0.3630
  • 500 $0.3630
  • 1,000 $0.3630
$0.3630 Buy Now
DISTI # 1727-4625-1-ND
DigiKey MOSFET N-CH 100V 51A LFPAK56 Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2446
In Stock
  • 1 $1.8500
  • 10 $1.1750
  • 100 $0.7907
  • 500 $0.6257
  • 1,500 $0.5454
  • 3,000 $0.5050
  • 4,500 $0.4844
  • 7,500 $0.4726
$0.4726 / $1.8500 Buy Now
DISTI # PSMN016-100YS,115
Avnet Americas Trans MOSFET N-CH 100V 51A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN016-100YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.4320
$0.4320 Buy Now
DISTI # 771-PSMN016-100YS115
Mouser Electronics MOSFETs PSMN016-100YS/SOT669/LFPAK RoHS: Compliant 1828
  • 1 $1.2200
  • 10 $1.0000
  • 100 $0.7060
  • 500 $0.6600
  • 1,000 $0.6450
  • 1,500 $0.5280
  • 3,000 $0.4810
  • 9,000 $0.4720
$0.4720 / $1.2200 Buy Now
Future Electronics N-Channel 100 V 51 A 16.3 mOhm 117 mW SMT Standard Level Mosfet - LFPAK56 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Lead time: 6 Weeks Container: Reel 0
Reel
  • 1,500 $0.4950
  • 3,000 $0.4850
  • 4,500 $0.4750
  • 6,000 $0.4750
  • 7,500 $0.4600
$0.4600 / $0.4950 Buy Now
DISTI # PSMN016-100YS.115
TME Transistor: N-MOSFET, unipolar, 100V, 51A, Idm: 204A, 117W Min Qty: 1 0
  • 1 $1.2500
  • 5 $1.1300
  • 25 $0.9900
  • 100 $0.8900
  • 500 $0.8400
$0.8400 / $1.2500 RFQ
DISTI # PSMN016-100YS,115
Avnet Asia Trans MOSFET N-CH 100V 51A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN016-100YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 6 Weeks, 0 Days 0
  • 1,500 $0.4892
  • 3,000 $0.4829
  • 4,500 $0.4767
  • 7,500 $0.4706
  • 15,000 $0.4590
  • 37,500 $0.4480
  • 75,000 $0.4374
$0.4374 / $0.4892 Buy Now
DISTI # PSMN016-100YS,115
Avnet Silica Trans MOSFET N-CH 100V 51A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN016-100YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S537100727963
Chip1Stop PSMN016-100YS/SOT669/LFPAK RoHS: Compliant pbFree: Yes 1500
  • 1,500 $0.5350
$0.5350 Buy Now
DISTI # C1S537100536149
Chip1Stop PSMN016-100YS/SOT669/LFPAK RoHS: Compliant pbFree: Yes 100
  • 100 $0.4930
$0.4930 Buy Now
DISTI # PSMN016-100YS,115
EBV Elektronik Trans MOSFET N-CH 100V 51A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN016-100YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for PSMN016-100YS,115 by Nexperia
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Part Data Attributes for PSMN016-100YS,115 by Nexperia
Parametric Data

PSMN016-100YS,115
Nexperia
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NEXPERIA
Part Package Code
SOIC
Package Description
LFPAK-4
Pin Count
4
Manufacturer Package Code
SOT669
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Nexperia
Avalanche Energy Rating (Eas)
87 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
51 A
Drain-source On Resistance-Max
0.0163 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-235
JESD-30 Code
R-PSSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
204 A
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. PSMN016-100YS,115
    Nexperia
    PSMN016-100YS - N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK@en-us SOIC 4-Pin
    VS

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