Part Details for PSMN025-100D/T3 by Nexperia
Overview of PSMN025-100D/T3 by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| GRM-KIT-OVER100-DE-D | Murata Manufacturing Co Ltd | 0805-1210 over100uF Cap Kit | |
| 6167LA100DB | Renesas Electronics Corporation | 16K(16KX1)CMOS STATIC RAM | |
| HXT14100-DNU | Renesas Electronics Corporation | 56Gb/s PAM4 VCSEL Driver |
Part Details for PSMN025-100D/T3
PSMN025-100D/T3 CAD Models
PSMN025-100D/T3 Part Data Attributes
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PSMN025-100D/T3
Nexperia
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Datasheet
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PSMN025-100D/T3
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 188 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN025-100D/T3
This table gives cross-reference parts and alternative options found for PSMN025-100D/T3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN025-100D/T3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN025-100D | Power Field-Effect Transistor | Nexperia | PSMN025-100D/T3 vs PSMN025-100D |
| PSMN025-100D | 47A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3 | NXP Semiconductors | PSMN025-100D/T3 vs PSMN025-100D |
| PSMN025-100D,118 | N-channel TrenchMOS SiliconMAX standard level FET@en-us DPAK 3-Pin | Nexperia | PSMN025-100D/T3 vs PSMN025-100D,118 |
| PSMN025-100D,118 | N-channel TrenchMOS SiliconMAX standard level FET DPAK 3-Pin | NXP Semiconductors | PSMN025-100D/T3 vs PSMN025-100D,118 |