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PSMN1R0-40YLD - N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 usingtttNextPower-S3 Schottky-Plus technology@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN1R0-40YLDX by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2449088RL
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Farnell | MOSFET, N CH, 40V, 100A, SOT-669-4 COO: CN RoHS: Compliant Min Qty: 100 Lead time: 17 Weeks, 1 Days Container: Reel | 1472 |
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$1.3699 / $1.7387 | Buy Now |
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DISTI #
PSMN1R0-40YLDX
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Avnet Americas | - Tape and Reel (Alt: PSMN1R0-40YLDX) COO: Philippines (the) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.7469 / $0.7900 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 9700 |
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$1.1400 / $1.4300 | Buy Now |
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DISTI #
PSMN1R0-40YLDX
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TME | Transistor: N-MOSFET, unipolar, 40V, 198A, Idm: 1284A, 198W Min Qty: 1 | 0 |
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$3.6800 / $3.9600 | RFQ |
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DISTI #
PSMN1R0-40YLDX
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Avnet Asia | (Alt: PSMN1R0-40YLDX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | 0 |
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RFQ | |
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Chip Stock | PowerField-EffectTransistor,100AI(D),1-Element,N-Channel,Metal-oxideSemiconductorFET | 104000 |
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RFQ | |
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LCSC | 40V 280A 1.1m10V25A 198W 2.2V 1 N-Channel LFPAK-56 Single FETs MOSFETs RoHS | 18 |
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$2.5783 / $2.6637 | Buy Now |
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PSMN1R0-40YLDX
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN1R0-40YLDX
Nexperia
PSMN1R0-40YLD - N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 usingtttNextPower-S3 Schottky-Plus technology@en-us SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SOIC | |
| Package Description | SOP-8, 4 PIN | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT1023 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 578 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1284 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PSMN1R0-40YLDX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R0-40YLDX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN1R0-40YLDX | NXP Semiconductors | Check for Price | PSMN1R0-40YLD - N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology SOIC 4-Pin | PSMN1R0-40YLDX vs PSMN1R0-40YLDX |
The recommended PCB footprint for PSMN1R0-40YLDX is a standard SOT23 package with a 1.3mm x 1.3mm pad size and a 0.5mm x 0.5mm thermal pad.
To ensure reliable operation of PSMN1R0-40YLDX in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal relief.
The maximum allowed voltage derating for PSMN1R0-40YLDX is 80% of the maximum rated voltage, as specified in the datasheet.
Yes, PSMN1R0-40YLDX can be used in a switching regulator application, but it is recommended to follow proper design guidelines and ensure that the device is operated within its specified ratings and limitations.
It is recommended to follow proper ESD handling and protection guidelines when handling PSMN1R0-40YLDX, including using ESD-safe materials and equipment, and following proper grounding and shielding procedures.