Part Details for PSMN1R2-25YL by NXP Semiconductors
Overview of PSMN1R2-25YL by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for PSMN1R2-25YL
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | 100 |
|
$0.4950 / $1.6500 | Buy Now | |
|
Win Source Electronics | N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK | 60000 |
|
$2.6960 / $3.3920 | Buy Now |
Part Details for PSMN1R2-25YL
PSMN1R2-25YL CAD Models
PSMN1R2-25YL Part Data Attributes:
|
PSMN1R2-25YL
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PSMN1R2-25YL
NXP Semiconductors
TRANSISTOR 100 A, 25 V, 0.00185 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, LFPAK-4, FET General Purpose Power
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, PLASTIC, LFPAK-4 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NXP | |
Avalanche Energy Rating (Eas) | 677 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.00185 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 121 W | |
Pulsed Drain Current-Max (IDM) | 815 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |