| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
90W9538
|
Newark | Mosfet Transistor, N Channel, 130 A, 60 V, 0.00294 Ohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia PSMN3R9-60PSQ RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | ||
|
DISTI #
1727-1133-ND
|
DigiKey | MOSFET N-CH 60V 130A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
5011 In Stock |
|
$1.3849 / $4.0500 | Buy Now | |
|
DISTI #
PSMN3R9-60PSQ
|
Avnet Americas | PHSPSMN3R9-60PSQ - Rail/Tube (Alt: PSMN3R9-60PSQ) RoHS: Compliant Min Qty: 5000 Package Multiple: 1000 Container: Tube | 0 |
|
$1.2031 | Buy Now | |
| Future Electronics | PSMN3R9 Series 60 V 130 A 3.9 mOhm ASFET Single N-Channel MOSFET - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 50 Lead time: 52 Weeks Container: Tube | 0Tube |
|
$1.2700 / $1.4000 | Buy Now | ||
|
DISTI #
PSMN3R9-60PSQ
|
TME | Transistor: N-MOSFET, unipolar, 60V, 130A, Idm: 705A, 263W Min Qty: 1 | 87 |
|
$1.9800 / $2.9600 | Buy Now | |
|
DISTI #
PSMN3R9-60PSQ
|
Avnet Silica | PHSPSMN3R9-60PSQ (Alt: PSMN3R9-60PSQ) RoHS: Compliant Min Qty: 5000 Package Multiple: 50 Lead time: 54 Weeks, 0 Days | Silica - 3800 |
|
Buy Now | ||
|
DISTI #
C1S548200931815
|
Chip1Stop | MOSFET | 400 |
|
$1.6500 / $3.9600 | Buy Now | |
|
DISTI #
PSMN3R9-60PSQ
|
EBV Elektronik | PHSPSMN3R9-60PSQ (Alt: PSMN3R9-60PSQ) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 54 Weeks, 0 Days | EBV - 4500 |
|
Buy Now | ||
| LCSC | 60V 130A 3.9m25A10V 263W 4V1mA 1 N-Channel TO-220AB MOSFETs ROHS | 48 |
|
$0.5360 / $1.9402 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NEXPERIA
|
|
Part Package Code
|
TO-220
|
|
Package Description
|
SC-46, 3 PIN
|
|
Pin Count
|
3
|
|
Manufacturer Package Code
|
SOT78
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Nexperia
|
|
Avalanche Energy Rating (Eas)
|
283 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
130 A
|
|
Drain-source On Resistance-Max
|
0.0039 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
705 A
|
|
Reference Standard
|
IEC-60134
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
